SMD Type
Dual N-Channel
MOSFET
SI4946DY
(KI4946DY)
SOP-8
MOSFET
■
Features
●
V
DS (V)
= 60V
●
I
D
= 6.5 A (V
GS
= 10V)
●
R
DS(ON)
＜
52mΩ (V
GS
= 4.5V)
●
175 °C Maximum Junction Temperature
0.21
-0.02
+0.04
1.50
0.15
●
R
DS(ON)
＜
41mΩ (V
GS
= 10V)
1 Source1
2 Gate1
3 Source2
4 Gate2
5 Drain2
6 Drain2
7 Drain1
8 Drain1
D
1
D
2
G
1
G
2
S
1
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc=25℃
Continuous Drain Current
Tc=70℃
Ta=25℃
Ta=70℃
Pulsed Drain Current
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1mH
Tc=25℃
Power Dissipation
Tc=70℃
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
t
≤
10 s
Steady State
R
thJA
R
thJC
T
J
T
stg
P
D
I
DM
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Rating
60
±20
6.5
5.5
5.3
4.4
30
12
7.2
3.7
2.6
2.4
1.7
62.5
41
150
-55 to 150
℃/W
W
mJ
A
Unit
V
℃
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1
SMD Type
Dual N-Channel
MOSFET
SI4946DY
(KI4946DY)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Curren
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
a
t
b
I
S
I
SM
V
SD
Tc = 25 °C
(Note.1)
I
S
=2A,V
GS
=0V (Note.1)
I
F
= 4.4 A, d
I
/d
t
= 100A/μs,T
J
= 25℃
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 10 V, Rg = 1
Ω
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 4.5 V, Rg = 1
Ω
V
GS
=0V, V
DS
=0V, f=1MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 5.3 A
V
DS
=30V, V
GS
=5V, I
D
=5.3A
3.1
V
GS
=0V, V
DS
=30V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=60V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5.3A (Note.1)
V
GS
=4.5V, I
D
=4.7A (Note.1)
V
GS
=10V, V
DS
=5V (Note.1)
V
DS
=15V, I
D
=5.3A (Note.1)
30
1
Min
60
MOSFET
Typ
Max
1
10
±100
3
41
52
Unit
V
uA
nA
V
mΩ
A
24
840
71
44
9.5
17
9.2
3.3
3.7
30
180
30
45
15
20
40
15
50
50
18
7
3.1
30
1.2
25
12
S
pF
Ω
nC
ns
nC
ns
A
V
Note.1: Pulse test; pulse width
≤
300 us, duty cycle
≤
2 %.
■
Marking
Marking
4946
KA****
2
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SMD Type
Dual N-Channel
MOSFET
SI4946DY
(KI4946DY)
■
Typical Characterisitics
30
V
GS
= 10 V thru 5 V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
MOSFET
20
4 V
15
6
4
T
C
= 150 °C
2
25 °C
10
5
3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
- 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.100
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
0.080
C - Capacitance (pF)
1000
C
iss
800
0.060
V
GS
= 4.5 V
0.040
V
GS
= 10 V
0.020
600
400
200
C
rss
0
10
C
oss
0.000
0
5
10
15
20
25
30
0
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I = 5.3 A
D
8
R
DS(on)
- On-Resistance
1.8
1.6
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
Q
g
- Total Gate Charge (nC)
0.6
- 50
V
DS
= 30 V
6
V
DS
= 48 V
4
2.2
I = 5.3 A
D
2.0
V
GS
- Gate-to-Source Voltage (V)
Capacitance
V
GS
= 10 V
(Normalized)
V
GS
= 4.5 V
2
- 25
0
25
50
75
100
125
150
175
Gate Charge
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (°C)
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SMD Type
Dual N-Channel
MOSFET
SI4946DY
(KI4946DY)
■
Typical Characterisitics
30
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.10
MOSFET
I = 5.3 A
D
0.08
T
J
= 150 °C
0.06
I
S
- Source Current (A)
10
T
J
= 175 °C
0.04
T
J
= 25 °C
0.02
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
I = 250 µA
D
2.4
V
GS(th)
(V)
2.2
2.0
1.8
1.6
1.4
1.2
- 50
.
On-Resistance vs. Gate-to-Source Voltage
25
20
Power (W)
15
10
5
- 25
0
25
50
75
100
125
150
175
0
0. 1
0
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
100
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
Limited by R
DS(on)
*
100 µs
1
1 ms
10 ms
I
C
- Peak Avalanche Current (A)
10
0.1
100 ms
T
A
= 25 °C
Single Pulse
1 s
10 s
DC
10
100
T
A
=
1
L ·
D
I
BV - V
DD
0.01
0. 1
0
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0. 00001
0
0.00001
0.0001
0. 01
0
T
A
- Time In Avalanche (s)
Safe Operating Area, Junction-to-Ambient
Single Pulse Avalanche Capability
4
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SMD Type
Dual N-Channel
MOSFET
SI4946DY
(KI4946DY)
■
Typical Characterisitics
8
7
6
I
D
- Drain Current (A)
Power (W)
5
4
3
2
1
0
0
25
50
75
100
125
150
175
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
MOSFET
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Power, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
Notes:
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base =
thJA
= 85 °C/W
R
T
3. T
JM
-
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Im pedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10
-4
10
-3
Single Pulse
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
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