SMD Type
Complementary Power Trench MOSFET
MOSFET
SI4558DY
(KI4558DY)
■
Features
●
N-Channel：V
DS
=30V I
D
=6A
●
●
R
DS(ON)
＜
40mΩ (V
GS
= 10V)
R
DS(ON)
＜
60mΩ (V
GS
= 4.5V)
R
DS(ON)
＜
40mΩ (V
GS
=-10V)
R
DS(ON)
＜
70mΩ (V
GS
=-4.5V)
SOP-8
●
P-Channel：V
DS
=-30V I
D
=-6A
●
●
0.21
-0.02
+0.04
1.50
0.15
1
2
3
4
Source1
Gate1
Source2
Gate2
5
6
7
8
Drain
Drain
Drain
Drain
D
S
2
S
1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150℃ (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Junction Temperature
Storage Temperature Range
Note.1:Surface Mounted on FR4 Board, t
≤
10 sec.
Ta = 25
℃
Ta = 70
℃
Ta = 25
℃
Ta = 70
℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
T
stg
G
2
G
1
N-Channel P-Channel
30
±20
6
4.7
30
2.4
1.5
52
150
-55 to 150
-6
-4.7
-30
-30
Unit
V
A
W
℃/W
℃
■
Marking
Marking
4558
KA****
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1
SMD Type
Complementary Power Trench MOSFET
MOSFET
SI4558DY
(KI4558DY)
Test Conditions
I
D
=250μA, V
GS
=0V
I
D
=-250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=24V, V
GS
=0V,T
J
=70℃
V
DS
=-24V, V
GS
=0V,T
J
=70℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS,
I
D
=-250μA
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4.8A
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4.4A
V
DS
=5V, V
GS
=10V
V
DS
=-5V, V
GS
=-10V
V
DS
=5V, V
GS
=4.5V
V
DS
=-5V, V
GS
=-4.5V
V
DS
=15V, I
D
=6A
V
DS
=-15V, I
D
=-6A
N-Channel:
V
GS
=10V, V
DS
=15V, I
D
=6A
P-Channel:
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
N-Channel:
V
GS
=10V, V
DS
=15V, I
D
=1A, R
G
=6Ω
R
L
=15Ω
P-Channel:
V
GS
=-10V, V
DS
=-15V, I
D
=-1A, R
G
=6Ω
R
L
=15Ω
I
F
=2A, d
I
/d
t
=100A/μs
I
F
=-2A, d
I
/d
t
=100A/μs
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
I
S
=2A,V
GS
=0V
I
S
=-2A,V
GS
=0V
N-CH
P-CH
0.77
-0.77
30
-30
8
-8
13
10.6
16
22
3.4
5.4
2.3
3.6
12
12
12
12
27
38
24
25
45
50
25
25
25
25
55
55
50
50
80
80
2
-2
1.2
-1.2
V
A
ns
30
35
nC
S
A
1
-1
32
45
32
56
40
60
40
70
mΩ
Type
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
Min
30
-30
1
-1
5
-5
±100
nA
V
μA
Typ
Max
Unit
V
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
V
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
V
GS(th)
Static Drain-Source On-Resistance
(Note.1)
R
DS(O
n
)
On-State drain Current (Note.1)
I
D(O
n
)
Forward Transconductance (Note.1)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage (Note.1)
g
FS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
Note.1: Pulse test; pulse width
≤
300 us, duty cycle
≤
2%.
2
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SMD Type
Complementary Power Trench MOSFET
MOSFET
SI4558DY
(KI4558DY)
Transfer Characteristics
■
N-MOSFET Typical Characterisitics
30
Output Characteristics
30
24
I D – Drain Current (A)
V
GS
= 10, 9, 8, 7, 6, 5 V
24
I D – Drain Current (A)
18
4V
12
18
12
T
C
= 125
。
C
。
25 C
。
–55 C
3
4
5
6
6
3V
6
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
0
0
1
2
V
GS
– Gate-to-Source Voltage (V)
0.150
0.125
r DS(on)– On-Resistance (
Ω
)
0.100
0.075
On-Resistance vs. Drain Current
1500
Capacitance
1200
C – Capacitance (pF)
C
iss
900
V
GS
= 4.5 V
0.050
0.025
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
GS
= 10 V
600
C
oss
300
C
rss
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 6 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
6
r DS(on)– On-Resistance (
Ω
)
(Normalized)
8
1.6
V
GS
= 10 V
I
D
= 6 A
1.2
4
0.8
2
0.4
0
0
4
8
12
16
Q
g
– Total Gate Charge (nC)
0
–50
0
50
100
150
T
J
– Junction Temperature (
。
C)
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3
SMD Type
Complementary Power Trench MOSFET
MOSFET
SI4558DY
(KI4558DY)
On-Resistance vs. Gate-to-Source Voltage
■
N-MOSFET Typical Characterisitics
30
Source-Drain Diode Forward Voltage
T
J
= 150
。
C
0.10
10
r DS(on)– On-Resistance (
Ω
)
0.08
I S – Source Current (A)
0.06
0.04
I
D
= 6 A
0.02
T
J
= 25
。
C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
0.4
0.2
V GS(th) Variance (V)
–0.0
–0.2
–0.4
–0.6
Threshold Voltage
I
D
= 250 A
40
Single Pulse Power
32
Power (W)
24
16
8
.
–0.8
–50
0
50
T
J
– Temperature (
。
)
C
100
150
0
0.01
0.1
1
Time (sec)
10
30
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 52
。
C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
4
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SMD Type
Complementary Power Trench MOSFET
MOSFET
SI4558DY
(KI4558DY)
30
■
P-MOSFET Typical Characterisitics
30
Output Characteristics
V
GS
= 10, 9, 8, 7, 6, 5 V
Transfer Characteristics
T
C
= –55
。
C
24
I D – Drain Current (A)
I D – Drain Current (A)
24
25
。
C
18
4V
12
18
。
125 C
12
6
3V
6
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
6
V
GS
– Gate-to-Source Voltage (V)
0.20
On-Resistance vs. Drain Current
2000
Capacitance
r DS(on)– On-Resistance (
Ω
)
0.15
C – Capacitance (pF)
1500
C
iss
0.10
V
GS
= 4.5 V
0.05
V
GS
= 10 V
1000
C
oss
500
C
rss
0
0
6
12
18
24
30
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 6 A
Gate Charge
2.0
1.8
r DS(on)– On-Resistance (
Ω
)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
V
GS
= 10 V
I
D
= 6 A
6
4
2
0
0
5
10
15
20
25
Q
g
– Total Gate Charge (nC)
0.4
–50
0
50
100
150
T
J
– Junction Temperature (
。
C)
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