Preliminary
Datasheet
BCR12FM-12LB
600v - 12A - Triac
Medium Power Use
Features
•
I
T (RMS)
: 12 A
•
Tj: 150 °C
•
I
FGTI
, I
RGTI
, I
RGT III
:30 mA
•
Insulated Type
•
Planar Passivation Type
•
V
iso
: 2000V
R07DS1104EJ0100
Rev.1.00
Aug 07, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
Conditions
Tj=150°C
Ratings
12
120
60
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 102°C
50Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
R07DS1104EJ0100 Rev.1.00
Aug 07, 2013
Page 1 of 7
BCR12FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
Note5
30
Note5
30
Note5
—
—
3.3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
°C/W
V/μs
V/μs
Test conditions
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 20 A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Tj = 150°C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS1104EJ0100 Rev.1.00
Aug 07, 2013
Page 2 of 7
BCR12FM-12LB
Preliminary
Performance Curves
Maximum
On-State
Characteristics
10
2
7
5
200
Rated Surge On-State
Current
Surge On-State
Current
(A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3
4 5 7
10
1
2 3
4 5 7
10
2
On-State
Current
(A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
Tj =
150°C
Tj =
25°C
1.5
2
2.5
3.0
3.5
4.0
On-State
Voltage
(V)
Conduction Time
(Cycles at
60Hz)
Gate
Trigger Current
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Current
(Tj
=
25°C)
Gate
Characteristics
(I,
II
and
III)
5
3
2
Gate
Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
GM
=
10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
=
2A
Gate
Voltage
(V)
10
1
7
5
3
V
GT
=
1.5V
2
10
0
7
5
3
2
I
RGT
I
, I
RGT
III
I
FGT I
10
–1
I
RGT
I
I
FGT I
, I
RGT
III
V
GD
=
0.1V
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Gate
Current
(mA)
Junction Temperature
(°C)
Gate
Trigger Voltage
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Voltage
(Tj
=
25°C)
Gate
Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Maximum Transient Thermal Impedance
Characteristics
(Junction to case)
Transient Thermal Impedance
(°C/W)
10
2
2 3
5 7
10
3
2 3
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
Typical Example
Junction Temperature
(°C)
Conduction Time
(Cycles at
60Hz)
R07DS1104EJ0100 Rev.1.00
Aug 07, 2013
Page 3 of 7
BCR12FM-12LB
Maximum Transient Thermal Impedance
Characteristics
(Junction to ambient)
Transient Thermal Impedance
(°C/W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
1
3
Preliminary
Maximum
On-State Power
Dissipation
16
On-State Power
Dissipation
(W)
No Fins
14
12
360°
Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10 2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
2 3
5 7
10
5
Conduction Time
(Cycles at
60Hz)
RMS On-State
Current
(A)
Allowable
Case Temperature vs.
RMS On-State
Current
160
160
Allowable Ambient
Temperature vs.
RMS On-State
Current
All
fins
are
black painted
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
120
100
Curves
apply regardless
of conduction angle
80
60
40
Ambient
Temperature
(°C)
14
16
140
140
120
100
80
Case Temperature
(°C)
360°
Conduction
20
Resistive,
inductive loads
0
0
2
6
4
8
10
12
60
Curves
apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural
convection
0
0
2
6
4
8
10
12
14
16
RMS On-State
Current
(A)
RMS On-State
Current
(A)
Repetitive Peak Off-State
Current
(Tj
=
t°C)
×
100 (%)
Repetitive Peak Off-State
Current
(Tj
=
25°C)
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
Repetitive Peak Off-State
Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20
0 20
40 60 80
100 120 140 160
Ambient
Temperature
(°C)
140
120
100
80
60
40
20
0
0
Natural
convection
No Fins
Curves
apply regardless
of conduction angle
Resistive,
inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
RMS On-State
Current
(A)
Junction Temperature
(°C)
R07DS1104EJ0100 Rev.1.00
Aug 07, 2013
Page 4 of 7
BCR12FM-12LB
Holding Current vs.
Junction Temperature
Holding Current
(Tj
=
t°C)
×
100 (%)
Holding Current
(Tj
=
25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Typical Example
Latching Current
(mA)
Distribution
T
2
+,
G
–
Typical Example
T
2
+,
G
+
Typical Example
T
2
–,
G
–
0
40
80
120
160
10
0
–40
Junction Temperature
(°C)
Junction Temperature
(°C)
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage
(Tj
=
t°C)
×
100 (%)
Breakover Voltage
(Tj
=
25°C)
160
140
120
100
80
60
40
20
0
–60 –40 –20
0 20
40 60 80
100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj=125°C)
160
140
120
100
80
60
40
Typical Example
Typical Example
Tj =
125°C
III Quadrant
I Quadrant
20
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
Junction Temperature
(°C)
Rate of Rise of Off-State
Voltage
(V/μs)
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj=150°C)
160
140
120
100
80
Commutation Characteristics
(Tj=125°C)
Critical
Rate of Rise of Off-State
Commutating Voltage
(V/μs)
10
2
Typical Example
7
Tj =
125°C
5
I
T
= 4A
3
τ
= 500μs
2
V
D
=
200V
f =
3Hz
10
1
7
5
3
2
10
0
7
10
0
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj =
150°C
III Quadrant
60
40
Minimum
Characteristics
Value
I Quadrant
I Quadrant
20
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
2 3
5 7
10
1
2 3
5 7
10
2
Rate of Rise of Off-State
Voltage
(V/μs)
Rate of
Decay
of On-State
Commutating Current
(A/ms)
R07DS1104EJ0100 Rev.1.00
Aug 07, 2013
Page 5 of 7
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