Preliminary
Datasheet
BCR10FM-12LB
600V - 10A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 10 A
V
DRM
: 600 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
:30 mA(20mA)
Note6
•
Insulated Type
•
Planar Passivation Type
•
V
iso
: 2000V
R07DS1107EJ0100
Rev.1.00
Aug 30, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note5
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Ratings
10
100
41.6
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Voltage class
12
600
720
Unit
V
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 1 of 7
BCR10FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
—
3.4
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
°C/W
V/μs
V/μs
Test conditions
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 15 A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Tj = 150°C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
6. High sensitivity (I
GT
≤
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –5.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 2 of 7
BCR10FM-12LB
Preliminary
Performance Curves
Maximum
On-State
Characteristics
10
2
100
7
5
Rated Surge On-State
Current
Surge On-State
Current
(A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3
4 5 7
10
1
2 3
4 5 7
10
2
On-State
Current
(A)
3
2
Tj =
150°C
10
1
7
5
3
2
Tj =
25°C
10
0
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State
Voltage
(V)
Conduction Time
(Cycles at
60Hz)
Gate
Trigger Current
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Current
(Tj
=
25°C)
Gate
Characteristics
(I,
II
and
III)
5
3
2
V
GM
=
10V
Gate
Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
Gate
Voltage
(V)
10
1
P
G(AV)
=
7
5
0.5W
3
V
GT
=
1.5V
2
10
0
7
5
3
2
P
GM
= 5W
I
GM
=
2A
I
RGT
I
, I
RGT
III
10
2
7
5
3
2
I
FGT I
I
RGT
I
I
FGT I
, I
RGT
III
10
–1
7
V
GD
=
0.1V
5
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Gate
Current
(mA)
Junction Temperature
(°C)
Gate
Trigger Voltage
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Voltage
(Tj
=
25°C)
Gate
Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Maximum Transient Thermal Impedance
Characteristics
(Junction to case)
Transient Thermal Impedance
(°C/W)
10
2
2 3
5 7
10
3
2 3
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
Typical Example
Junction Temperature
(°C)
Conduction Time
(Cycles at
60Hz)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 3 of 7
BCR10FM-12LB
Maximum Transient Thermal Impedance
Characteristics
(Junction to ambient)
Transient Thermal Impedance
(°C/W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
1
3
Preliminary
Maximum
On-State Power
Dissipation
16
No Fins
On-State Power
Dissipation
(W)
5
14
12
360°
Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10 2 3
5 7
10 2 3
5 7
10 2 3
5 7
10 2 3
5 7
10
2
3
4
Conduction Time
(Cycles at
60Hz)
RMS On-State
Current
(A)
Allowable
Case Temperature vs.
RMS On-State
Current
160
140
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
Ambient
Temperature
(°C)
Curves
apply regardless
of conduction angle
140
120
100
80
All
fins
are
black painted
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Case Temperature
(°C)
120
100
80
60
40
360°
Conduction
20
Resistive,
inductive loads
0
0
2
6
4
8
10
12
14
16
60
Curves
apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural
convection
0
0
2
6
4
8
10
12
14
16
RMS On-State
Current
(A)
RMS On-State
Current
(A)
Repetitive Peak Off-State
Current
(Tj
=
t°C)
×
100 (%)
Repetitive Peak Off-State
Current
(Tj
=
25°C)
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
Repetitive Peak Off-State
Current vs.
Junction Temperature
10
6
7
Typical Example
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ambient
Temperature
(°C)
140
120
100
80
60
40
20
0
0
Natural
convection
No Fins
Curves
apply regardless
of conduction angle
Resistive,
inductive loads
10
5
10
4
10
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
10
2
–60 –40 –20
0 20
40 60 80
100 120 140 160
RMS On-State
Current
(A)
Junction Temperature
(°C)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 4 of 7
BCR10FM-12LB
Holding Current vs.
Junction Temperature
Holding Current
(Tj
=
t°C)
×
100 (%)
Holding Current
(Tj
=
25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140 160
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Latching Current
(mA)
Distribution
T
2
+,
G
–
Typical Example
10
1
7
5
3
T
2
+,
G
+
2
Typical Example
T
2
–,
G
–
10
0
–40
0
40
80
120
160
Junction Temperature
(°C)
Junction Temperature
(°C)
160
140
120
100
80
60
40
20
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage
(Tj
=
t°C)
×
100 (%)
Breakover Voltage
(Tj
=
25°C)
Typical Example
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj=125°C)
160
140
120
100
80
60
40
20
0
10
100
1000
10000
Typical Example
Tj =
125°C
III Quadrant
I Quadrant
0
–60 –40 –20
0 20
40 60 80
100 120 140 160
Junction Temperature
(°C)
Rate of Rise of Off-State
Voltage
(V/μs)
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj=150°C)
160
140
120
Commutation Characteristics
(Tj=125°C)
Critical
Rate of Rise of Off-State
Commutating Voltage
(V/μs)
7
5
3
2
10
1
7
5
3
2
10
0
7
0
10
Time
Typical Example
Main Voltage
(dv/dt)c
V
D
Tj =
125°C
Main Current
(di/dt)c
I
T
= 4A
I
T
τ
= 500μs
τ
Time
Typical Example
Tj =
150°C
III Quadrant
100
80
60
40
20
0
10
100
1000
10000
V
D
=
200V
f =
3Hz
I Quadrant
Minimum
Characteristics
Value
I Quadrant
III Quadrant
2 3
5 7
10
1
2 3
5 7
10
2
Rate of Rise of Off-State
Voltage
(V/μs)
Rate of
Decay
of On-State
Commutating Current
(A/ms)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 5 of 7
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