SMD Type
Switching Diodes
MMBD7000
(KMBD7000)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Surface Mount Package Ideally Suited for Automatic Insertion
●
For General Purpose Switching Applications
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
●
Fast Switching Speed
+0.1
1.3
-0.1
●
Dual Swithching Diode
0.4
3
+0.05
0.1
-0.01
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1us
@ t = 1s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
RRM
V
RWM
V
RMS
I
O
I
FSM
P
d
R
θJA
T
J
T
stg
Rating
100
75
53
200
2
1
225
556
150
-55 to 150
mA
A
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Symbol
V
R
V
F
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
Reverse voltage leakage current
Diode capacitance
Reverse recovery time
I
R
C
T
t
rr
V
R
= 50 V
V
R
= 100 V
V
R
= 0 V, f= 1 MHz
I
F
=I
R
=10mA,Irr=0.1xI
R
, R
L
=100Ω
Test Conditions
I
R
= 100 uA
Min
100
0.7
0.82
1.1
1
3
2
4
uA
pF
ns
V
Typ
Max
Unit
■
Marking
Marking
5C
+0.1
0.38
-0.1
0-0.1
+0.1
0.97
-0.1
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1
SMD Type
Switching Diodes
MMBD7000
■
Typical Characterisitics
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
Diodes
(KMBD7000)
I
R
, LEAKAGE CURRENT (nA)
100
1000
10
100
1.0
10
0.1
V
R
= 20V
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
1
0
100
200
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
2
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