SMD Type
Diodes
Switching Diodes
MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW
(KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW)
■
Features
●
Fast Switching Speed
●
For General Purpose Switching Applications.
●
High Conductance, Power Dissipation
●
Epoxy meets UL 94 V-0 flammability rating
●
Moisture Sensitivity Level 1
A
1
C
A
2
C
1
A
C
2
A
1
C
2
C
2
A
4
NC
A
3
C
4
NC
C
3
C
1
C
1
A
2
MMBD4448HCQW
C
1
MMBD4448HAQW
AC
1
MMBD4448HADW
C
1
A
2
A
2
C
2
A
2
C
2
C
3
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
A
3
MMBD4448HCDW
MMBD4448HSDW
MMBD4448HTW
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Peak Forward Surge Current @ t=1us
Peak Forward Surge Current @ t=1s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FM
I
FSM
P
d
R
θJA
T
J
T
stg
57
250
500
4
1.5
200
625
150
-65 to 150
mA
A
mW
℃/W
℃
80
V
Rating
100
Unit
www.kexin.com.cn
1
SMD Type
Diodes
Switching Diodes
MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW
(KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW)
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
I
R1
Reverse voltage leakage current
I
R2
I
R3
I
R4
Junction capacitance
Reverse recovery time
C
j
t
rr
I
R
= 100 uA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 70 V
V
R
= 75 V , T
J
= 150℃
V
R
= 25 V , T
J
= 150℃
V
R
=20V
V
R
= 6 V, f= 1 MHz
I
F
=5mA,VR=6V
Test Conditions
Min
100
0.62
0.72
0.855
1
1.25
100
50
30
25
3.5
4
nA
uA
nA
pF
ns
V
Typ
Max
Unit
■
Marking
NO.
Marking
MMBD4448
HCQW
KA4
MMBD4448
HAQW
KA5
MMBD4448
HADW
KA6
MMBD4448
HCDW
KA7
MMBD4448
HSDW
KAB
MMBD4448
HTW
KAA
■
Typical Characterisitics
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
1000
10000
T
A
= 125ºC
1000
100
100
T
A
= 75ºC
10
T
A
= -40ºC
T
A
= 0ºC
10
T
A
= 25ºC
1
T
A
= 25ºC
T
A
= 75ºC
T
A
= 125ºC
1
T
A
= 0ºC
T
A
= -40ºC
0.1
0
0.4
0.8
1.2
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
0.1
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
2
www.kexin.com.cn
SMD Type
Diodes
Switching Diodes
MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW
(KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW)
■
Typical Characterisitics
3
f = 1MHz
250
2.5
C
T
, TOTAL CAPACITANCE (pF)
2
P , POWER DISSIPATIO (mW)
N
d
0
10
20
30
40
200
150
1.5
100
1
0.5
50
0
0
0
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve, Total Package
200
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance vs. Reverse Voltage
2.5
T
rr
, REVERSE RECOVERY TIME (nS)
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
I
F
, FORWARD CURRENT (mA)
Fig. 5 Reverse Recovery Time vs.
Forward Current
www.kexin.com.cn
3
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
