SMD Type
Switching Diodes
MMBD2004/A/C/S
(KMBD2004/A/C/S)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Surface Mount Package Ideally Suited for Automatic Insertion
●
High Reverse Breakdown Voltage
●
Dual Series Configuration
+0.1
1.3
-0.1
●
Fast Switching Speed
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Peak Forward Surge Current
Peak Repetitive Forward Current
Non-Repetitive Peak Forward Surge Current @ t=1us
@ t=1s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
RWM
V
R
V
RMS
I
FM
I
FRM
I
FSM
P
d
R
θJA
T
J
T
stg
Rating
300
240
240
170
225
625
4
1
350
357
150
-65 to 150
mA
A
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Total capacitance
Reverse recovery time
Symbol
V
R
V
F
I
R
C
T
t
rr
Test Conditions
I
R
= 100 uA
I
F
= 20 mA
I
F
= 100 mA
V
R
= 240 V
V
R
= 240 V , T
J
=150℃
V
R
= 0 V, f= 1 MHz
I
F
=I
R
=30mA,Irr=3 mA,R
L
=100Ω
Min
300
0.87
1
100
100
5
50
nA
uA
pF
ns
V
Typ
Max
Unit
+0.1
0.38
-0.1
0-0.1
0.97
+0.1
-0.1
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1
SMD Type
Switching Diodes
MMBD2004/A/C/S
■
Marking
Item
MMBD2004
MMBD2004C
MMBD2004A
MMBD2004S
Marking
DB3
DB4
DB5
DB6
Eqivalent Circuit diagram
3
3
3
3
Diodes
(KMBD2004/A/C/S)
1
1
2
1
2
1
2
■
Typical Characterisitics
(mA)
1000
T
j
= 25 ° C
100
I
F
, INST ANT ANEOUS FOR WARD CURRENT
(
u
A)
CURRENT
100
10
10
1
I
R
, LEAKAGE
0
1
2
1.0
0.1
0.1
0.01
V
F
, INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fi g. 1 Forward Characteristics
0.01
0
100
200
T
j
, JUNCTION TEMPERA TURE ( ° C )
Fig. 2 Leakage Current vs Junction Temperature
2
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