SMD Type
High Speed Switching Diodes
HSC119
(KSC119)
Diodes
SOD-523
+0.05
0.3
-0.05
+0.1
1.2
-0.1
Unit:mm
+0.1
0.6
-0.1
●
Low capacitance. (C = 2.0 pF max)
●
Short reverse recovery time. (trr = 3.0 ns max)
●
Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.05
0.8
-0.05
Features
+
-
+0.1
1.6
-0.1
0.77max
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse voltage
Forward current
Peak forward surge current
Junction Temperature
Storage temperature range
Symbol
V
RM
I
F
I
FM
T
J
T
stg
Rating
85
100
300
125
-55 to 125
Unit
V
mA
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
V
R
V
F1
V
F2
I
R1
C
j
t
rr
Test Conditions
I
R
= 100 uA
I
F
= 10mA
I
F
= 100mA
V
R
= 80V
V
R
= 0V, f= 1 MHz
I
F
=10mA, V
R
=6V,R
L
=50Ω
Min
85
0.8
1.2
0.1
2
3
uA
pF
ns
V
Typ
Max
Unit
Marking
Marking
A
0.07max
+0.05
0.1
-0.02
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1
SMD Type
High Speed Switching Diodes
HSC119
■
Typical Characterisitics
Diodes
(KSC119)
1.0
10
–4
10
–5
Reverse current I
R
(A)
Forward current I
F
(A)
10
–1
10
–6
10
–7
10
–8
10
–9
10
–10
10
–11
Ta=75
°
C
Ta=50
°
C
Ta=25
°
C
10
–3
Ta =
75
°
C
Ta =
25
°
C
Ta =
-25
°
C
10
–2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
DC
Supply
0.1µF
3k
Ω
Sampling
Rin =50
Ω
Oscilloscope
Ro =50
Ω
Pulse
Generator
Trigger
1.0
0.1
0.1
1.0
Reverse voltage V
R
(V)
10
Fig.3 Capacitance vs. Reverse voltage
2
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