BCP869
Elektronische Bauelemente
PNP
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
The BCP869 is designed for application required for high current (maximum -1 A) and low voltage (maximum -20 V).
PACKAGE DIMENSIONS
SOT-89
A
C
D
M
REF.
A
B
C
D
E
F
I
H
G
L
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
E
B
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
F
J
K
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-32
-20
-5
-1
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
VBE
V
CE(sat)
f
T
Min.
-32
-20
-5
-
-
50
100
60
-
-
40
Max.
-
-
-
-0.1
-0.1
-
375
-
-1
-0.5
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
=-0.1mA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-0.1mA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-5 V, I
C
=0
V
CE
=-10V, I
C
= -5mA
V
CE
=-1V, I
C
= -500mA
V
CE
=-1V, I
C
= -1A
V
CE
=-1V, I
C
= -1A
I
C
=-1A, I
B
= -100mA
V
CE
=-5V, I
C
=-10mA, f = 100MHz
V
V
MHz
CLASSIFICATION OF hFE2
Rank
Range
Marking
BC869
100 – 375
CEC
BC869-16
100 - 250
CGC
BC869-25
160 – 375
CHC
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 1 of 2
BCP869
Elektronische Bauelemente
PNP
Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 2 of 2