BCP157
Elektronische Bauelemente
-3A, -80V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
4
1
A
E
-60Volt V
CEO
3 Amp continuous current
Low saturation voltage
2
3
C
B
F
G
H
D
1. Base
2. Collector
3. Emitter
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7’ inch
Base
K
J
L
Collector
REF.
A
B
C
D
E
F
Emitter
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
DC
Pulse
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
2
P
C
T
J
, T
STG
Ratings
-80
-60
-5
-3
-6
0.5
2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Collector-base breakdown voltage
Collector-emitter breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(ON)
C
CO
f
T
T
ON
T
OFF
Min.
-80
-60
-5
-
-
70
100
80
40
-
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
200
200
170
150
-150
-450
-0.9
-0.8
-
140
40
450
Max.
-
-
-
-0.1
-0.1
-
300
-
-
-300
-600
-1.25
-1
30
-
-
-
Unit
V
V
V
μA
μA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage On
Output capacitance
Transition frequency
Switching Time
mV
mV
V
V
pF
MHz
nS
I
C
= -100μA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -100mA, f=100MHz
V
CC
= -10V,I
C
= -500mA,
I
B1
= -I
B2
= -50mA
Test Conditions
Note:
1. Measured under pulse condition. Pulse width<300us, Duty cycle<2%
2. Spice parameter data is available upon urquest for this device.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Nov-2014 Rev. B
Page 1 of 2
BCP157
Elektronische Bauelemente
-3A, -80V
PNP Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Nov-2014 Rev. B
Page 2 of 2
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