CZD2983
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The CZD2983 is designed for power amplifier and
driver stage amplifier applications.
D-Pack (TO-252)
FEATURES
High transition frequency：f
T
= 100MHz (Typ.)
Complements to CZD1225
A
B
C
D
CLASSIFICATION OF Hfe
Rank
Range
CZD2983-O
70 ~ 140
CZD2983-Y
120 ~ 240
GE
K
M
J
HF
MARKING
2983
1
2
3
N
O
P
REF.
Date Code
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.90
4.95
5.50
2.10
2.50
0.43
0.9
6.0
7.5
2.80 REF
5.40
6.40
0.60
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.64
1.14
0.50
1.14
1.3
1.8
0
0.13
0.58REF.
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
13 inch
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature
T
A
=25°C
T
C
=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
J
T
STG
Ratings
160
160
5
1.5
0.3
1
15
150
-55 ~ 150
Unit
V
V
V
A
A
W
W
℃
℃
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2013 Rev. B
Page 1 of 3
CZD2983
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
1
Base-emitter saturation voltage
1
DC current gain
1
Transition frequency
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
OB
Min.
160
160
5
-
-
-
-
70
-
-
Typ.
-
-
-
-
-
-
-
-
100
25
Max.
-
-
-
1
1
1.5
1.0
240
-
-
Unit
V
V
V
μA
μA
V
V
Test Conditions
I
C
= 1mA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1mA, I
C
=0
V
CB
= 160V, I
E
=0
V
EB
= 5V, I
C
=0
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 100mA
MHz
pF
V
CE
= 10V, I
C
= 100mA
V
CB
=10V, I
E
=0, f=1MHz
Note:
1. Measured under pulse condition. Pulse width
≦
300μs, Duty Cycle
≦
2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2013 Rev. B
Page 2 of 3
CZD2983
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2013 Rev. B
Page 3 of 3
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