DIP Type
TRIACS Thyristor
BT137-600E
TO-220
1.30
±
0.10
(1.70)
9.90
±
0.20
2.80
±
0.10
(8.70)
ø3.60
±
0.10
Thyristor
4.50
±
0.20
1.30
–0.05
+0.10
■
Features
(1.46)
(3.00)
●
RMS on-state current :8A
●
Non-repetitive peak on-state current :65A
9.20
±
0.20
13.08
±
0.20
(1.00)
15.90
±
0.20
1.27
±
0.10
1.52
±
0.10
1 2 3
0.80
±
0.10
2.54TYP
[2.54
±
0.20
]
2.54TYP
[2.54
±
0.20
]
10.08
±
0.30
18.95MAX.
(3.70)
●
Repetitive peak off-state voltages :600V
(45
)
0.50
–0.05
+0.10
2.40
±
0.20
T2
T1
10.00
±
0.20
1
Main Terminal 1
2
Main Terminal 2
3
Gate
G
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Forward and Reverse Blocking Voltages
RMS on-state Current @ full sine wave; Tmb
≤
102 °C
Non-Repetitive Peak on-state Current (t=20ms)
Non-Repetitive Peak on-state Current (t=16.7ms)
Circuit Fusing Considerations (t = 10ms)
Peak Gate Current
Peak Gate Voltage
Peak Gate Power
Average Gate Power
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Mounting Base @ full cycle
Thermal Resistance Junction to Mounting Base @ half cycle
junction Temperature
Storage Temperature range
Symbol
V
DRM
V
RRM
I
T(RMS)
I
TSM
I
2
t
I
GM
V
GM
P
GM
P
G(AV)
R
thJA
R
thJB
T
J
T
stg
Rating
600
8
65
71
21
2
5
5
0.5
60
2
2.4
125
-40 to 150
℃
K/W
A
2
s
A
V
W
A
Unit
V
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1
DIP Type
TRIACS Thyristor
BT137-600E
■
Electrical Characteristics
(Ta = 25℃, unless otherwise noted.)
Parameter
Repetitive Peak off-state Voltages
Off-state Leakage Current
On-state Voltage
Gate Trigger Voltage
Symbol
V
DRM
I
D
V
TM
V
GT
I
D=
I
R
=50uA
V
DRM(Max)
=V
D,
T
J
=125℃
I
T
=10A
V
D
=12V, I
T
=100mA
V
D
=400V, I
T
=100mA,T
J
=125℃
T
2
+ G+
Gate Trigger Current
I
GT
V
D
=12V, I
T
=100mA
T
2
+ G-
T
2
- G-
T
2
- G+
T
2
+ G+
Latching Current
I
L
V
D
=12V, I
GT
=100mA
T
2
+ G-
T
2
- G-
T
2
- G+
Holding Current
I
H
V
D
=12V; I
G
=100mA
T
2
+ G+
Repetitive Rate of rise of on-state
Current after Triggering
d
IT
/d
t
T
2
+ G-
T
2
- G-
T
2
- G+
Critical Rate of rise of off-state Voltage
Critical Rate of Change of Commutating
Voltage
Gate Controlled turn-on time
dV
D
/dt
V
DM
=67% V
DRM
(max); T
j
=125℃
exponential waveform; gate open circuit
50
Test Conditions
Thyristor
Min
600
Typ.
Max
0.5
1.65
1.5
Unit
V
mA
V
0.25
25
25
25
70
30
45
30
45
20
50
50
50
10
250
V/us
20
2
us
A/us
mA
mA
V
DM
=400V; T
j
=95℃;I
T(RMS)
= 8 A;
dV
com
/dt
dI
com
/dt = 3.6 A/ms; gate open circuit
tgt
I
TM
=12A; V
D
=V
DRM
(max),I
G
=100mA;
d
IG
/d
t
=5A/us
2
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DIP Type
TRIACS Thyristor
BT137-600E
■
Typical Characterisitics
12
10
1
Thyristor
Ptot / W
BT137
Tmb(max) / C
101
= 180
120
90
60
30
109
113
117
121
125
10
105
10
8
6
4
2
IT(RMS) / A
BT137
102 C
8
6
4
2
0
0
2
4
6
IT(RMS) / A
8
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
BT137
BT137
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
BT137
1000
IT
I TSM
time
25
20
15
Tj initial = 25 C max
100
dI
T
/dt limit
T2- G+ quadrant
10
5
0
0.01
10
10us
100us
1ms
T/s
10ms
100ms
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT137
IT
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
102˚C.
VGT(Tj)
VGT(25 C)
80
70
60
50
40
30
20
10
1.6
1.4
1.2
1
0.8
0.6
BT136
Tj initial = 25 C max
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
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3
DIP Type
TRIACS Thyristor
BT137-600E
■
Typical Characterisitics
3
2.5
2
1.5
1
0.5
0
-50
0
50
Tj / C
100
150
5
Thyristor
IGT(Tj)
IGT(25 C)
BT137
T2+ G+
T2+ G-
T2- G-
T2- G+
25
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.264 V
Rs = 0.0378 Ohms
BT137
20
typ
max
15
10
0
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
0.5
TRIAC
10
Zth j-mb (K/W)
BT137
unidirectional
1
bidirectional
0.1
P
D
tp
t
0
-50
0
50
Tj / C
100
.
150
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
pulse width t
p
.
dV/dt (V/us)
off-state dV/dt limit
BT137-600E
3
2.5
2
1.5
1
0.5
TRIAC
1000
100
10
dIcom/dt =
10 A/ms
7.9
6.1
4.7
3.6
2.8
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
4
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