MMBT491
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low equivalent on-resistance
MARKING:
491
Base
3
Collector
1
SOT-23
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
2
Emitter
A
L
3
H
K
2
J
J
K
C
Top View
1
B S
L
S
V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
80
60
5
1
500
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
1
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
1
h
FE(2)
1
h
FE(3)
1
h
FE(4)
1
V
CE(sat)1
1
V
CE(sat)2
1
V
BE(sat)
1
V
BE
f
T
C
OB
Min.
80
60
5
-
-
100
100
80
30
-
-
-
-
150
-
Max.
-
-
-
0.1
0.1
-
300
-
-
0.25
0.5
1.1
1
10
Unit
V
V
V
μA
μA
Test Conditions
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=500mA
V
CE
=5V,I
C
=1A
V
CE
=5V,I
C
=2A
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
I
C
=1A, V
CE
=5V
V
CE
= 10V, I
C
= 50mA, f = 100MHz
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
V
V
V
V
MHz
pF
Note: 1. Measured under pulsed conditions, Pulse width = 300
μs,
Duty cycle
≤
2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 1 of 2
MMBT491
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
0.6
0.5
0.4
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
10A
I
C
/ I
B
= 10
I
C
/ I
B
= 50
+ 25 C
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
/ I
B
= 10
- 55 C
+ 25 C
+ 100 C
1mA
10mA
100mA
1A
10A
I
C
- Collector Current
V
CE(sat)
vs I
C
I
C
- Collector Current
V
CE(sat)
vs
I
C
400
V
CE
= 5 V
1.0
300
+ 100 C
0.8
0.6
0.4
100
- 55 C
I
C
/ I
B
= 10
200
+ 25 C
- 55 C
+ 25 C
+ 100 C
0.2
0
1mA
0
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
h
FE
vs
I
C
1.2
1.0
0.8
0.6
0.4
0.2
0
1mA
10mA
100mA
1A
10A
0.01
0.1V
- 55 C
+ 25 C
+ 100 C
V
CE
= 5 V
V
BE(sat)
vs
I
C
10
1
DC
1s
100 ms
10 ms
1 ms
100 s
0.1
1V
10V
100V
I
C
- Collector Current
V
CE
- Collector Emitter Voltage (V)
V
BE(on)
vs I
C
Safe Operat ing Area
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 2 of 2
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