MMBD4448
Elektronische Bauelemente
RoHS Compliant Product
Surface Mount Switching Diode
FEATURES
A suffix of "-C" specifies halogen & lead-free
A
L
Top View
2
3
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
3
1
B S
V
G
C
3
CATHODE
1
ANODE
1
2
D
H
K
J
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
100
250
500
Unit
Vdc
mAdc
mAdc
SOT-23
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
350
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
All Dimension in mm
DEVICE MARKING
MMBD4448 = KA3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 2.5
m
Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
—
—
CT
VF
trr
—
—
—
25
5.0
4.0
1.0
4.0
nAdc
m
Adc
pF
Vdc
ns
75
—
Vdc
0.062 in.
0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
MMBD4448
Elektronische Bauelemente
Surface Mount Switching Diode
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
VR
Input Signal
90%
IR
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
0.1
µF
tr
10%
tp
t
IF
trr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
TA = 85°C
I
F
, Forward
Current
(mA)
10
10
TA = 150°C
TA = –40°C
IR , Reverse
Current
(µA)
1.0
TA = 125°C
TA = 25°C
1.0
0.1
TA = 85°C
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VF,
Forward Voltage (V)
0.001
0
10
20
30
40
50
VR, Reverse
Voltage (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD , Diode
Capacitance
(pF)
0.64
0.60
0.56
0.52
0
2.0
4.0
VR,
Reverse Voltage (V)
6.0
8.0
Figure 4. Capacitance
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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