MJE170 / MJE171 / MJE172
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
PNP General Purpose Transistor
TO-126
FEATURES
Low frequency amplifier
Low current
High speed switching applications
E
F
Emitter
Collector
Base
A
B
C
L
K
N
M
J
H
D
G
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
7.40
7.80
2.50
2.90
10.60
11.00
15.30
15.70
3.70
3.90
3.90
4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.10
1.50
0.45
0.60
0.66
0.86
2.10
2.30
1.17
1.37
3.00
3.20
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified)
Parameter
MJE170
Collector - Base Voltage
MJE171
MJE172
MJE170
Collector - Emitter Voltage
MJE171
MJE172
Emitter - Base Voltage
Collector Current -Continuous
Cpllector Power Dissipation
Junction, Storage Temperature
V
EBO
I
C
P
C
T
J
, T
STG
V
CEO
V
CBO
Symbol
Ratings
-60
-80
-100
-40
-60
-80
-7
-3
1.5
+150, -65 ~ +150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Breakdown
Voltage
Collector - Emitter Breakdown
Voltage
MJE170
MJE171
MJE172
MJE170
MJE171
MJE172
V
(BR)EBO
I
CBO
MJE170
Collector Cut - Off Current
MJE171
MJE172
V
(BR)CEO
V
(BR)CBO
Symbol
Min.
-60
-80
-100
-40
-60
-80
-7
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
-
-0.1
-0.1
-0.1
Unit
V
Test Conditions
I
C
= -1mA, I
E
= 0
V
V
I
C
= -10 mA, I
B
= 0
I
E
= -1mA, I
C
= 0
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
Emitter - Base Breakdown Voltage
A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2010 Rev. A
Page 1 of 3
MJE170 / MJE171 / MJE172
Elektronische Bauelemente
PNP General Purpose Transistor
Emitter Cut - Off Current
DC Current Gain
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)1
-
50
30
12
-
-
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
250
-
-
-0.3
-0.9
-1.7
-1.5
-2
-1.2
-
50
A
V
V
V
V
V
V
MHz
pF
Collector - Emitter Saturation Voltage
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
V
BE(sat)2
V
BE
f
T
C
OB
Base – Emitter Saturation Voltage
Base – Emitter Voltage
Transition Frequency
Collector output capacitance
V
EB
= -7V, I
C
= 0
V
CE
= -1V, I
C
= -100 mA
V
CE
= -1V, I
C
= -500 mA
V
CE
= -1V, I
C
= -1.5A
I
C
= -500mA, I
B
= -50 mA
I
C
= -1.5A, I
B
= -150 mA
I
C
= -3A, I
B
= -600 mA
I
C
= -1.5A, I
B
= -150 mA
I
C
= -3A, I
B
= -600 mA
V
CE
= -1V, I
C
= -500 mA
V
CE
= -10V, I
C
= -100 mA
V
CB
= -10V, I
E
= 0, f = 0.1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2010 Rev. A
Page 2 of 3
MJE170 / MJE171 / MJE172
Elektronische Bauelemente
PNP General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2010 Rev. A
Page 3 of 3
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