BYW52-BYW56
2.0A Axial Leaded Silicon Rectifier
Features
•
•
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current loading
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
B
A
D
C
DO-15
Mechanical Data
·
Case:
DO-15 Sintered glass case
·
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
·
Polarity:
Color band denotes cathode end
·
Mounting Position:
Any
·
Weight:
approx. 369 mg
Dim
A
B
C
D
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYW52
BYW53
BYW54
BYW55
BYW56
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, di/dt = 5 A/µs, V
R
= 50 V
I
F
= 1 A, di/dt = 5 A/µs
ϕ
= 180 °
t
p
= 20
µs
half sine wave,
T
j
= 175 °C
Test condition
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
t
p
= 10 ms, half sinewave
@ T
A
= 25°C unless otherwise specified
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
Min
Typ.
0.9
0.1
5
Value
200
400
600
800
1000
50
12
2
1000
Max
1.0
1
10
1600
18
4
4
200
Unit
V
V
V
V
V
A
A
A
W
Unit
V
µA
µA
V
pF
µs
µs
nC
1 of 3
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
Therm. Resist. Junction/Ambient (K/W)
120
l
100
– Forward Current (A)
l
10.000
80
60
40
20
0
0
5
10
15
20
25
30
l - Lead Length ( mm )
T
L
= constant
1.000
T
j
= 175 °C
0.100
T
j
= 25 °C
I
F
0.010
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
16350
94 9101
V
F
– Forward Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
I
FAV
–Average Forward Current( A )
V
R
= V
RRM
half sinewave
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
R
thJA
= 45 K/W
l = 10 mm
P – Reverse Power Dissipation ( mW )
R
2.5
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T
j
– Junction Temperature ( °C )
P
R
–Limit
@100 % V
R
V
R
= V
RRM
P
R
–Limit
@80 % V
R
R
thJA
= 100 K/W
PCB: d = 25 mm
16351
16353
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
C
D
– Diode Capacitance ( pF )
40
V
R
= V
RRM
35
30
25
20
15
10
5
0
0.1
16354
f = 1 MHz
I
R
– Reverse Current (A)
100
10
1
25
16352
50
75
100
125
150
175
T
j
– Junction Temperature (°C )
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
2of3
Z
thp
–Thermal Resistance for PulseCond.(K/W)
1000
V
RRM
= 1000 V, R
thJA
= 100K/W
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
1
10
–5
10
–4
T
amb
= 60 °C
T
amb
= 70°C
T
amb
= 100°C
10
–3
10
–2
10
–1
10
0
10
1
10
1
10
2
I
FRM
– Repetitive Peak
Forward Current ( A )
10
0
T
amb
= 25°C
T
amb
= 45°C
94 9178
t
p
– Pulse Length ( s )
Figure 7. Thermal Response
3of3
传感器
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