MMBT720
Elektronische Bauelemente
-1.5A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Applications
Switching transistor
Extremely low saturation voltage
Complementary NPN type: MMBT619
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
APPLICATION
Gate Driving MOSFETs and IGBTs
DC-DC converters
Charging circuit
Power switches
K
E
D
F
G
H
J
MARKING
720
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7’ inch
1
Base
Collector
3
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Base Current
Collector Current - Continuous
Peak Pulse Current
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
1
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CM
P
C
R
θJA
T
J
, T
STG
Ratings
-40
-40
-5
-0.5
-1.5
-4
350
357
150, -55~150
Unit
V
V
V
A
A
A
mW
° /W
C
°
C
Note:
1. Measured under pulse conditions . Pulse width =300µs. Duty cycle≤2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Dec-2013 Rev. A
Page 1 of 2
MMBT720
Elektronische Bauelemente
-1.5A , -40V
PNP Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Min.
-40
-40
-5
-
-
-
300
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
435
Max.
-
-
-
-0.1
-0.1
-0.1
-
-
-
-
-
-40
-220
-330
-1
-1
-
25
-
-
Unit
V
V
V
µA
µA
µA
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -35V, I
E
=0
V
CE
= -35V, V
BE
=0
V
EB
= -4V, I
C
=0
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -1.5A
V
CE
= -2V, I
C
= -3A
I
C
= -100mA, I
B
= -10mA
DC Current Gain
1
h
FE
180
60
12
-
Collector-Emitter Saturation Voltage
1
V
CE(sat)
-
-
mV
I
C
= -1A, I
B
= -50mA
I
C
= -1.5A, I
B
= -100mA
Base-Emitter Saturation Voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on Time
Turn-off Time
1
1
V
BE(sat)
V
BE(on)
f
T
C
ob
t
(on)
t
(off)
-
-
150
-
-
-
V
MHz
pF
nS
I
C
= -1.5A, I
B
= -75mA
V
CE
= -2V, I
C
= -1.5A
V
CE
= -10V,I
C
= -50mA, f=100MHz
V
CB
= -10V, f=1MHz
V
CC
= -15V,I
C
= -0.75A,
I
B1
= I
B2
= -15mA
Note:
1. Measured under pulse conditions . Pulse width =300µs. Duty cycle≤2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Dec-2013 Rev. A
Page 2 of 2
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