Preliminary
Datasheet
BCR12LM-12LD
600V - 12A - Triac
Medium Power Use
Features
I
T (RMS)
: 12 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT
: 50 mA
Viso: 1800V
Insulated Type
Planar Passivation Type
Tj: 150 °C
UL Recognized: File No. E223904
R07DS0983EJ0100
Rev.1.00
Dec 20, 2012
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Heater control, motor control
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note5
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Symbol
V
DRM
V
DSM
Ratings
12
72
21.6
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Voltage class
12
600
700
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 77C
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Unit
V
V
Typical value
Ta = 25C, AC 1 minute
T
1
T
2
G terminal to case
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 1 of 7
BCR12LM-12LD
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
Typ.
Max.
—
—
2.0
—
—
1.8
—
—
—
—
—
—
0.2
—
10
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
50
50
—
4.3
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 20A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –6 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 2 of 7
BCR12LM-12LD
Preliminary
Main Characteristics
Maximum
On-State
Characteristics
10
2
Tj =
25°C
100
Rated Surge On-State
Current
Surge On-State
Current
(A)
On-State
Current
(A)
80
10
1
60
40
10
0
20
10
−1
0
1
2
3
4
0
10
0
10
1
10
2
On-State
Voltage
(V)
Conduction Time
(Cycles at
60Hz)
10
2
Gate
Trigger Current
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Current
(Tj
=
25°C)
Gate
Characteristics
(I,
II
and
III)
Gate
Trigger Current vs.
Junction Temperature
10
3
Typical Example
I
RGT
III
Gate
Voltage
(V)
V
GM
=
10
V
10
1
V
GT
=
1.5
V
P
G(AV)
=
0.5
W
P
GM
= 5 W
10
2
I
GM
=
2 A
I
FGT I
I
RGT
I
10
0
I
FGT I
I
RGT
I
I
RGT
III
V
GD
=
0.2
V
10
−1
1
10
10
2
10
3
10
4
10
1
–40
0
40
80
120
160
Gate
Current
(mA)
Junction Temperature
(°C)
Gate
Trigger Voltage
(Tj
=
t°C)
×
100 (%)
Gate
Trigger Voltage
(Tj
=
25°C)
Gate
Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics
(Junction to case)
Transient Thermal Impedance
(°C/W)
10
2
5
10
3
10
4
4
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
10
−1
10
0
10
1
10
2
Junction Temperature
(°C)
Conduction Time
(Cycles at
60Hz)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 3 of 7
BCR12LM-12LD
Maximum Transient Thermal Impedance
Characteristics
(Junction to ambient)
Transient Thermal Impedance
(°C/W)
10
3
Preliminary
Maximum
On-State Power
Dissipation
20
On-State Power
Dissipation
(W)
No Fins
10
2
16
360°
Conduction
Resistive,
12
inductive loads
10
1
8
10
0
4
10
−1
1
10
10
2
10
3
10
4
10
5
0
0
2
4
6
8
10
12
14
16
Conduction Time
(Cycles at
60Hz)
RMS On-State
Current
(A)
Allowable
Case Temperature vs.
RMS On-State
Current
160
Curves
apply regardless
of conduction angle
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
All
fins
are
black painted
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
regardless of
120
100
80
60
40
360°
Conduction
Ambient
Temperature
(°C)
Case Temperature
(°C)
140
140
120
100
80
60
Curves
apply
40
conduction angle
20
inductive loads
0
0
Natural
convection
Resistive,
20
Resistive,
inductive loads
0
0
2
4
6
8
10 12 14 16
2
4
6
8
10 12 14 16
RMS On-State
Current
(A)
RMS On-State
Current
(A)
Repetitive Peak Off-State
Current
(Tj
=
t°C)
×
100 (%)
Repetitive Peak Off-State
Current
(Tj
=
25°C)
Allowable Ambient
Temperature vs.
RMS On-State
Current
160
Natural
convection
No Fins
Curves
apply regardless
of conduction angle
Resistive,
inductive loads
Repetitive Peak Off-State
Current vs.
Junction Temperature
10
6
Typical Example
10
5
Ambient
Temperature
(°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
10
4
10
3
1.5
2.0
2.5
3.0
10
2
–40
0
40
80
120
160
RMS On-State
Current
(A)
Junction Temperature
(°C)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 4 of 7
BCR12LM-12LD
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
10
3
Typical Example
Distribution
Preliminary
Holding Current
(Tj
=
t°C)
×
100 (%)
Holding Current
(Tj
=
25°C)
10
3
Latching Current
(mA)
T
2
+,
G
–
Typical Example
10
2
10
2
10
1
T
2
+,
G
+
Typical Example T
2
–,
G
–
Typical Example
0
40
80
120
160
10
1
−40
0
40
80
120
160
10
0
–40
Junction Temperature
(°C)
Junction Temperature
(°C)
160
140
120
100
80
60
40
20
0
−40
0
40
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj
=
125°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
Typical Example
Tj =
125°C
III Quadrant
Breakover Voltage
(Tj
=
t°C)
×
100 (%)
Breakover Voltage
(Tj
=
25°C)
Typical Example
80
120
160
Junction Temperature
(°C)
Rate of Rise of Off-State
Voltage
(V/μs)
Breakover Voltage
(dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage
(dv/dt
=
1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State
Voltage
(Tj
=
150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
Commutation Characteristics
(Tj=125°C)
10
2
Critical
Rate of Rise of Off-State
Commutating Voltage
(V/μs)
Typical Example
Tj =
150°C
III Quadrant
Typical Example
Tj =
125°C
I
T
= 4A
τ
= 500μs
V
D
=
200V
f =
3Hz
10
1
Minimum
Value
III Quadrant
I Quadrant
Time
Main
Voltage
(dv/dt)c
V
D
Main
I
T
Current
(di/dt)c
τ
Time
10
0
10
0
10
1
10
2
Rate of Rise of Off-State
Voltage
(V/μs)
Rate of
Decay
of On-State
Commutating Current
(A/ms)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 5 of 7
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