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RS1D

产品描述1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小120KB,共2页
制造商SUNMATE
官网地址http://www.sunmate.tw/
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RS1D概述

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

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RS1A-RS1M
1.0A Surface Mount Rectifier
Features
·
Plastic package has
underwriters laborator
flammabilityclassification
94V-0
·
For surface mounted applications
·
Low profile package
·
Built-in strain relief,ideal for automated placement
·
Glass passivated chip junction
·
High temperature soldering:
250
o
C/10 seconds at terminals
1
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
Case:JEDEC DO-214AC,molded plastic over
passivated chip
·
Terminals:Solder plated, solderable per MIL-STD-
750, Method 2026
·
Polarity: color band denotes cathode end
·
Weight: 0.002 ounces, 0.064 gram
J
D
H
G
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
RS1A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximumaverage forw ord rectified current
c
@
T
L
=90
O
C
Peak forward surge current 8.3ms single
c
half-sine-wave superimposed on rated
c
load
Maximuminstantaneous forw ard voltage at
1.0A
Maximum DC reverse current
@T
A
=25
o
C
o
RS1B
100
70
100
RS1D RS1G RS1J RS1K RS1M
200
140
200
400
280
400
1.0
30.0
1.30
5.0
600
420
600
800
560
800
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
R
JA
JL
50
35
50
A
V
A
at rated DCblocking voltage @T
A
=125 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
50.0
150
10
105
32
- 55 ------ + 150
250
500
7.0
o
ns
pF
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Rev erse recov ery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts
C
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm
2
) copper pad areas
1of2

RS1D相似产品对比

RS1D RS1A RS1B RS1G RS1M RS1J RS1K
描述 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 0.7 A, SILICON, SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
状态 - ACTIVE ACTIVE ACTIVE TRANSFERRED ACTIVE ACTIVE
二极管类型 - SIGNAL DIODE SIGNAL DIODE 信号二极管 信号二极管 信号二极管 SIGNAL DIODE

 
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