PZT195
Elektronische Bauelemente
PNP Silicon Planar
Medium Power Transistor
RoHS Compliant Product
Features
* -60 Voltage V
CEO
.
* 1 Amps continuous current.
* Complementary to PZT194
SOT-223
Mechanical Data
Case:
SOT-223 Plastic Package
Weight:
approx. 0.021g
Marking Code:
195
C
E
B
C
1
1.
2.
2
BASE
COLLECTOR
EMITTER
3
Maximum Ratings and Thermal Characteristics
(T
A
= 25
O
C unless otherwise noted)
Parameter
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
3.
Junction Temperature
Storage Temperature
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Notes:
Device on alumina substrate.
-
Value
+150
-55 to +150
-
80
-
60
Unit
O
O
C
C
V
V
A
A
V
-5
-
1
-0.2
2.0
W
Electrical Characteristics
(T
J
= 25
C
O
unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emmiter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
Output Capacitance
http://www.SeCoSGmbH.com
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
Min
-80
-60
-5
-
-
-
-
-
-
-
100
100
80
15
150
-
Typ. Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
-
300
-
-
-
10
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
I
C
=-100uA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100uA, I
C
=0
VCB=-60V, IE=0
VCES=-60V
VEB=-4V, IC=0
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=1mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
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