MMDT5451
Elektronische Bauelemente
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-363
FEATURES
DUAL TRANSISTOR (NPN+PNP)
Epitaxial Planar Die Construction
Ideal for low Power Amplification and Switching
One 5551(NPN), one 5401(PNP)
A
E
L
B
MARKING : KNM
F
DG
K
C
H
J
EQUIVALENT CIRCUIT
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
E1, B1, C1 = PNP 5401
E2, B2, C2 = NPN 5551
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction & Storage temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
NPN RATINGS
180
160
6
0.2
0.2
PNP RATINGS
-160
-150
-5
-0.2
0.2
UNIT
V
V
V
A
W
°
C/W
°
C
625
150, -55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2009 Rev. B
Page 1 of 4
MMDT5451
Elektronische Bauelemente
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
NPN5551 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
OB
NF
MIN.
180
160
6
-
-
80
80
30
-
-
-
-
100
-
-
MAX.
-
-
-
0.05
0.05
-
250
-
0.15
0.2
1
1
300
6.0
8.0
UNIT
V
V
V
µA
µA
TEST CONDITIONS
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
= 10V, I
C
= 10mA, f = 100MHz
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 5.0V, I
C
= 200µA,
R
S
= 1.0k ,f = 1.0kHz
V
V
V
V
MHz
pF
dB
PNP5401 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
OB
NF
MIN.
-160
-150
-5
-
-
50
60
50
-
-
-
-
100
-
-
MAX.
-
-
-
-50
-50
-
240
-
-0.2
-0.5
-1
-1
300
6.0
8.0
UNIT
V
V
V
nA
nA
TEST CONDITIONS
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-5V,I
C
=-1mA
V
CE
=-5V,I
C
=-10mA
V
CE
=-5V,I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
= -10V, I
C
= -10mA, f = 100MHz
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10 , f = 1.0kHz
V
V
V
V
MHz
pF
dB
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2009 Rev. B
Page 2 of 4
MMDT5451
Elektronische Bauelemente
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2009 Rev. B
Page 3 of 4
MMDT5451
Elektronische Bauelemente
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
CHARACTERISTIC CURVES (cont’d)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2009 Rev. B
Page 4 of 4
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