Model No.
Rev.
FYA-R3219AZX-XX
A
PRODUCT SPECIFICATION
Descriptions & Features:
Bargraph Digit Display
Case mold type.
RoHS compliant.
Low current operation
Low power consumption.
Easy mounting on P.C. board or socket.
CUSTOMER APPROVED
SIGNATURES
APPROVED BY
NINGBO FORYARD OPTOELECTRONICS CO.,LTD
Add:NO.115
Qixin Road Ningbo Zhejiang China
Tel:
0086-574-87933652 87927870 87922206
Fax:
0086-574-87927917
E-mail:Sales@foryard.com
( General)
：
moc.drayrof.www//:pttH
：
：
：
：
Model No.
FYA-R3219AZX-XX
moc.drayrof.www//:pttH
■
■
■
■
■
■
CHECKED BY
PREPARED BY
Zip:315051
Page
1/5
Model No.
Rev.
FYA-R3219AZX-XX
A
-XX: REF Surface / Epoxy color
Epoxy Color
Water Clear
White
Red
Green
Mechanical Dimensions
Notes:
1. All pins are Φ0.51[.020]mm
2. Dimension in millimeter [inch], tolerance is ±0.25 [.010] and angle is ±1° unless otherwise noted.
3. Bending Length*1%.
4.The specifications,characteristics and technical data described in the datasheet are subject to change without prior notice.
：
○
○
○
○
○
○
moc.drayrof.www//:pttH
○
○
○
○
：
：
：
：
Model No.
FYA-R3219AZX-XX
≤
■
■
■
■
■
■
■
■
Color
Number
0
White
1
Black
2
Gray
3
Red
4
Green
Yellow
REF Surface Color
Page
2/5
Model No.
Rev.
FYA-R3219AZX-XX
A
All Light On Segments Feature & Pin Position
Internal Circuit Diagrams
：
moc.drayrof.www//:pttH
：
：
：
：
Model No.
FYA-R3219AZX-XX
■
■
■
■
■
■
■
■
Page
3/5
Model No.
Rev.
FYA-R3219AZX-XX
A
Absolute maximum ratings
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Pulse Current
Operating Temperature
Storage Temperature
Symbol
VR
IF
Pd
Ipeak
Topr
Tstr
Test Condition
IR=30
—
—
Duty=0.1mS,1KHz
—
—
Value
Min
Max
Unit
V
mA
mW
mA
Emitting Color
Dice
Material
Peak Wave
Length(λ
P
)
Spectral
Luminous
Forward
Line
Voltage(VF) Unit:V Intensity
halfwidth(∆
(Iv)
λ1/2)
Unit:mcd
Max
Typ
2.00
1.80
1.90
1.90
1.90
1.90
1.90
3.40
2.80
2.80
2.80
2.80
1.90
1.90
1.90
1.90
1.90
1.90
2.80
2.80
2.80
2.80
2.80
2.50
2.50
2.50
2.50
2.50
2.50
2.50
4.40
3.80
3.80
3.80
3.80
2.50
2.50
2.50
2.50
2.50
2.50
3.80
3.80
3.80
3.80
3.80
1
15~20
26~38
14~20
13~18
13~18
14~18
0.7~1(mw)
6~12(mw)
6~12(mw)
4~6(mw)
20~30
30~60
60~100
60~120
40~100~150
50~140~190
30~60~80
260~310
260~310
80~90~120
80~90~120
180~200
Standard brightness
H Red
S Hi Red
D Super Red
E Orange
A Amber
Y Yellow
G Green
B
Blue
GaP
AlGaAs/SH
AlGaAs/DH
GaAsP
GaAsP
GaAsP
GaP
InGaN
InGaN
InGaN
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
InGaN
InGaN
PG Pure Green
W White
Ultra brightness
UHR Ultra Hi Red
UR Ultra Red
UE Ultra Orange
UA Ultra Amber
UY Ultra Yellow
UG Ultra Green
PG Ultra Pure Green
BG Ultra Bluish Green
700nm
90nm
660nm
20nm
650nm
20nm
625nm
35nm
610nm
35nm
590nm
35nm
570nm
10nm
430nm
460nm
60nm
470nm
520nm
36nm
X=0.29,Y=0.30 CCT:9500K
640nm
20nm
635nm
20nm
625nm
20nm
610nm
20nm
590nm
20nm
570nm
30nm
520nm
36nm
505nm
36nm
460nm
30nm
UB Ultra Blue
InGaN
470nm
30nm
InGaN
X=0.29,Y=0.30 CCT:9500K
UW Ultra White
Segment-to-Segment Luminous Intensity ratio(Iv-M)
1.5:1
Note:
1.Luminous Intensity is based on the Foryard standards.
2.Pay attention about static for InGaN
：
Page
℃
Electrical-Optical Characteristics
Color Code & Chip Characteristics:(Test Condition:IF=20mA)
(Ta=25
℃
℃
5
—
—
—
-40
-40
—
30
100
150
+85
+85
℃
moc.drayrof.www//:pttH
：
：
：
：
Model No.
FYA-R3219AZX-XX
(Ta=25
)
■
■
■
■
■
■
■
■
●
)
4/5
41
5.
1
7
.
0
0.45
LEBAL EDISTUO
Note: The specifications are subject to change without notice. Please contact us for updated information.
Model No.
Packing Diagram
FYA-R3219AZX-XX
Model No.
Rev.
FYA-R3219AZX-XX
A
Page
NOITNETTA
NOITNETTA
NOITNETTA
：
moc.drayrof.www//:pttH
5/5
LEBAL EDISTUO
SHoR
SHoR
SHoR
SHoR
xxxxxxxxxx
GK04.32 :WN
CQ
:CQ
SSAP
GK08.02 :WG
xx/xx/xxxx:etaD
SCP 4853 :ytQ
XX-XX9123R-AYF:NP
DEL
DEL
DEL
DEL
DRA YRO F
S C I N O R T C E L E O T P O
notraC/sexoB4
xoB/sgaB4
moc.drayrof.www
3
6
.
0
DR A YR OF
S C I N O R T C E L E O T P O
3
1
.
0
0.65
gaB/smaoF4
xxxxxxxxxx
CQ
:CQ
SSAP
xx/xx/xxxx:etaD
SCP 422 :YT'Q
XX-XX9123R-AYF :ON traP
SHoR
SHoR
SHoR
SHoR
DRAYROF
maoF/SCP65
■
■
■
■
：
：
：
：
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
