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BN1L3M

产品描述COMPOUND TRANSISTOR
文件大小97KB,共4页
制造商NEC ( Renesas )
官网地址https://www2.renesas.cn/zh-cn/
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BN1L3M概述

COMPOUND TRANSISTOR

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DATA SHEET
COMPOUND TRANSISTOR
BN1L3M
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 4.7 kΩ, R
2
= 4.7 kΩ)
• Complementary transistor with BA1L3M
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−60
−50
−10
−100
−200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
10 ms, duty cycle
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Resistance ratio
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
R
2
/R
2
t
on
t
stg
t
off
V
CC
=
−5
V, R
L
= 1 kΩ
V
I
=
−5
V, PW = 2
µ
s
duty cycle≤2 %
Conditions
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
B
=
−100
µ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
−30
3.29
0.9
20
70
40
110
−0.02
−1.1
−1.5
4.7
10
6.11
1.1
0.5
3.0
5.0
−0.3
−0.8
MIN.
TYP.
MAX.
−100
80
Unit
nA
V
V
V
kΩ
µ
s
µ
s
µ
s
** PW
350
µ
s, duty cycle
2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13587EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

 
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