SMS840
Elektronische Bauelemente
0.13A , 50V , R
DS(ON)
10
Ω
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low On-Resistance : 10
Low Input Capacitance: 30PF
Low Out Put Capacitance : 10PF
Low Threshold : 2V
Fast Switching Speed : 2.5ns
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
K
E
D
APPLICATIONS
DC-DC Converter
Cellular & PCMCIA Card
Cordless Telephone
Power Management in Portable and Battery etc
P-Channel
D
3
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
J
MARKING
PD
G
1
S
2
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current @T
A
=25°
C
Pulsed Drain Current(tp≤10us)
Power Dissipation @T
A
=25°
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature Range
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
T
J
, T
STG
Rating
-50
±20
-130
-520
225
556
-55~150
Unit
V
V
mA
mA
mW
°
C/W
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 1 of 4
SMS840
Elektronische Bauelemente
0.13A , 50V , R
DS(ON)
10
Ω
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
1
Unit
Teat Conditions
Static Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On Resistance
Forward Transconductance
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
-50
-
-
-
-0.8
-
50
-
-
-
-
-
5
-
-
-0.1
V
µA
V
GS
=0, I
D
= -250µA
V
GS
=0, V
DS
= -25V
V
GS
=0, V
DS
= -50V
-15
±60
-2
10
-
mS
µA
V
V
GS
=±20V, V
DS
=0
V
DS
=V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.1A
V
DS
= -25V,
,
I
D
= -0.1A, f=1.0KHz
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
-
-
-
30
10
5
-
-
-
2
pF
V
DS
= -5V, V
GS
=0, f=1MHz
Switching Characteristics
Turn-On Delay Time
Turn-Off Delay Time
Rise Time
Fall Time
Gate Charge
T
d(ON)
T
d(OFF)
T
r
T
f
Q
T
-
-
-
-
-
25
16
1
8
6000
-
-
-
-
-
pC
nS
V
DD
= -15V, ,I
D
= -2.5A,
R
L
=50 ,
Source-Drain Diode Characteristics
Continuous Current
Pulsed Current
Forward Voltage
2
I
S
I
SM
V
SD
-
-
-
-
-
-2.5
0.13
0.52
-
A
V
Notes:
1. Pulse Test : PW≤300us, Duty Cycle≤2%.
2. Switching Time is Essentially Independent of Operating Temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 2 of 4
SMS840
Elektronische Bauelemente
0.13A , 50V , R
DS(ON)
10
Ω
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 3 of 4
SMS840
Elektronische Bauelemente
0.13A , 50V , R
DS(ON)
10
Ω
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 4 of 4
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