SMS2020
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
830mA, 20V
N-Channel MOSFET
DESCRIPTIONS
The SMS2020 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent R
DS (ON)
with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
1
SOT-23
A
3
3
L
Top View
2
C B
1
2
MECHANICAL DATA
K
E
D
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
F
REF.
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
J
APPLICATION
DC-DC converter circuit
Load Switch
A
B
C
D
E
F
DEVICE MARKING:
W28
= Date Code
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
1
Power Dissipation
1
Continuous Drain Current
2
Power Dissipation
2
Pulsed Drain Current
3
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
R
θJL
T
J
, T
STG
Rating
10S
20
±6
0.9
0.72
0.38
0.24
0.79
0.63
0.29
0.19
1.4
260
150, -55~150
0.83
0.66
0.32
0.2
0.71
0.57
0.24
0.15
Steady State
Unit
V
V
A
W
A
W
A
°C / W
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-May-2013 Rev. B
Page 1 of 4
SMS2020
Elektronische Bauelemente
830mA, 20V
N-Channel MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Single Operation
Junction-to-Ambient Thermal Resistance
1
Junction-to-Ambient Thermal Resistance
2
Junction-to-Case Thermal Resistance
T≦10S
Steady State
T≦10S
Steady State
Steady State
R
θJA
R
θJA
R
θJC
270
320
360
425
260
325
385
420
520
300
°C / W
Rating
Typ.
Max.
Unit
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
20
-
-
0.45
-
Drain-Source On Resistance
R
DS(ON)
-
-
Forward Transconductance
g
FS
-
-
-
-
0.58
220
260
320
2
-
1
±5
0.85
310
360
460
-
S
mΩ
V
μA
μA
V
V
GS
=0, I
D
=250μA
V
DS
=16V, V
GS
=0
V
DS
=0 , V
GS
= ±5V
V
DS
=V
GS,
I
D
=250μA
V
GS
=4.5V, I
D
=0.55A
V
GS
=2.5V, I
D
=0.45A
V
GS
=1.8V, I
D
=0.35A
V
DS
=5V, I
D
= 0.55A
Typ.
Max.
Unit
Teat Conditions
Body-Drain Diode Ratings
Diode Forward On–Voltage
V
SD
0.5
0.7
1.5
V
I
S
=350mA, V
GS
=0
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
T
d(ON)
T
r
T
d(OFF)
T
f
-
-
-
-
-
-
-
-
-
-
-
50
13
8
1.15
0.06
0.15
0.23
22
80
700
380
-
-
-
-
-
-
-
-
-
-
-
nS
V
DD
=10V,
I
D
=0.55A,
V
GS
=4.5V,
R
G
=6Ω.
nC
V
DS
=10V,
V
GS
=4.5V,
I
D
=0.55A
pF
V
DS
=10V,
V
GS
=0,
f=100KHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-May-2013 Rev. B
Page 2 of 4
SMS2020
Elektronische Bauelemente
830mA, 20V
N-Channel MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-May-2013 Rev. B
Page 3 of 4
SMS2020
Elektronische Bauelemente
830mA, 20V
N-Channel MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-May-2013 Rev. B
Page 4 of 4
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