SMG5409
Elektronische Bauelemente
-2.6A , -30V , R
DS(ON)
120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5409 provide the designer with best combination
of fast switching, low on-resistance and cost-effectiveness.
The SMG5409 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
A
L
3
SC-59
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Simple Drive Requirement
Small Package Outline
F
G
H
J
MARKING
5409
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
1
3
2
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
T
j
, T
stg
1
2
Symbol
V
DS
V
GS
T
A
=25°
C
I
D
T
A
=70°
C
I
DM
T
A
=25°
C
P
D
Ratings
-30
±20
-2.6
Unit
V
V
A
-2
-12
1.38
0.01
-55~150
A
W
W/°
C
°
C
Thermal Resistance Rating
Maximum Junction to Ambient
2
R
θJA
90
° /W
C
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in
2
copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 1 of 4
SMG5409
Elektronische Bauelemente
-2.6A , -30V , R
DS(ON)
120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
-30
-1.0
-
-
-
-
R
DS(ON)
g
fs
-
-
-
-
-
-
-
-
-
4
-
-3.0
V
V
nA
µA
-5
120
m
170
-
S
V
GS
=0, I
D
= -250uA
V
DS
=V
GS
, I
D
= -250uA
V
GS
=
±
20V
V
DS
= -30V, V
GS
=0
V
DS
= -24V, V
GS
=0
V
GS
= -10V, I
D
= -2.6A
V
GS
= -4.5V, I
D
= -2.0A
V
DS
= -5V, I
D
= -2.5A
±
100
-1
Drain-Source On-Resistance
Forward Transconductance
1
Dynamic
Total Gate Charge
1
Q
g
Q
gs
Q
gd
1
-
-
-
-
-
-
-
-
-
-
5
1
3
8
5
20
7
412
91
62
8
-
-
-
-
nS
-
-
660
-
-
pF
nC
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -24V,
V
GS
= -4.5V,
I
D
= -2.6A
V
DS
= -15V,
V
GS
= -10V,
R
G
=3.3 ,
R
D
=15 ,
I
D
= -1A
V
GS
=0,
V
DS
= -25V,
f=1.0MHz
T
d(on)
T
r
T
d(off)
T
f
Ciss
Coss
Crss
Source-Drain Diode
Diode Forward Voltage
1
1
V
SD
T
RR
Q
RR
-
-
-
-
16.8
10
-1
-
-
V
ns
nC
I
S
= -1A, V
GS
=0
I
S
= -2.6A, V
GS
=0
dI/dt=100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width≦300us, duty cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 2 of 4
SMG5409
Elektronische Bauelemente
-2.6A , -30V , R
DS(ON)
120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 3 of 4
SMG5409
Elektronische Bauelemente
-2.6A , -30V , R
DS(ON)
120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 4 of 4
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