SMG5402
Elektronische Bauelemente
4A , 30V , R
DS(ON)
55 mΩ
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG5406 is universally used for all commercial-industrial
applications.
A
L
3
SC-59
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Simple Drive Requirement
Small Package Outline
F
G
H
J
REF.
MARKING
5402
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
T
j
, T
stg
1,2
3
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=25°
C
P
D
Ratings
30
±12
4
Unit
V
V
A
3
16
1.38
0.01
-55~150
A
W
W/°
C
°
C
Thermal Resistance Rating
Maximum Junction to Ambient
3
R
θJA
90
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2012 Rev. A
Page 1 of 4
SMG5402
Elektronische Bauelemente
4A , 30V , R
DS(ON)
55 mΩ
Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage
Current
T
J
=25°
C
T
J
=70°
C
BV
DSS
V
GS(th)
I
GSS
I
DSS
30
0.5
-
-
-
-
Drain-Source On-Resistance
R
DS(ON)
-
-
Forward Transconductance
g
fs
-
-
-
-
-
-
-
-
-
3
-
1.5
V
V
nA
µA
25
55
70
110
-
S
m
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=
±
12V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=4A
V
GS
=4.5V, I
D
=3A
V
GS
=2.5V, I
D
=2A
V
DS
=10V, I
D
=3A
±
100
1
Dynamic
Total Gate Charge
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
2
-
-
-
-
-
-
-
-
-
-
6
1
2.8
5.8
9.6
14.4
3.9
335
50
45
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
Gate-Source Charge
Gate-Drain (‘‘Miller’’) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
V
DS
=15V,
V
GS
=4.5V,
I
D
=3A
V
DS
=15V,
V
GS
=5V,
R
G
=3.3 ,
R
D
=15 ,
I
D
=1A
V
GS
=0,
V
DS
=25V,
f=1.0MHz
T
d(off)
T
f
Ciss
Coss
Crss
Source-Drain Diode
Diode Forward Voltage
2
2
V
SD
T
RR
Q
RR
-
-
-
-
15
8
1.2
-
-
V
ns
nC
I
S
=1.2A, V
GS
=0
I
S
=3A, V
GS
=0
dI/dt=100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270° /W when mounted on Min. copper pad.
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2012 Rev. A
Page 2 of 4
SMG5402
Elektronische Bauelemente
4A , 30V , R
DS(ON)
55 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2012 Rev. A
Page 3 of 4
SMG5402
Elektronische Bauelemente
4A , 30V , R
DS(ON)
55 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2012 Rev. A
Page 4 of 4
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