电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BN1A4Z

产品描述on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
文件大小100KB,共4页
制造商NEC ( Renesas )
官网地址https://www2.renesas.cn/zh-cn/
下载文档 全文预览

BN1A4Z概述

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

文档预览

下载PDF文档
DATA SHEET
COMPOUND TRANSISTOR
BN1A4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 10 kΩ)
• Complementary transistor with BA1A3Q
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−60
−50
−5
−100
−200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
10 ms, duty cycle
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
t
on
t
stg
t
off
V
CC
=
−5.0
V, R
L
= 1.0 kΩ
V
I
=
−5.0
V, PW = 2.0
µ
s
duty cycle≤2 %
Conditions
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
−2.0
7.0
135
100
190
170
−0.07
−0.57
−0.9
10
13.0
0.2
5.0
6.0
−0.2
−0.5
MIN.
TYP.
MAX.
100
600
Unit
nA
V
V
V
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
350
µ
s, duty cycle
2 %
h
FE
CLASSIFICATION
Marking
h
FE1
Q
135 to 270
P
200 to 400
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13584EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
ISE中不能生成.xaw结构设计向导
最近遇到个问题,就是在ISE中新建dcm或pll 的architecture wizard时,一直新建不了,提示 ERROR:sim - Failed to generate 'dcm'. Architecture Wizard process returned with an error ......
wanganhui787 FPGA/CPLD
电源芯片到底是怎么分类的
来自EEWORLD合作群:12425841 我看LM317 既有说线性稳压电源的 也有说开关电源的 ...
拿得起铁 电源技术
msp430f5529出不了方波啊
#include void main(void) { WDTCTL=WDTPW+WDTHOLD; P2SEL|=BIT0; //声明有特殊功能,不做普通I/O使用 P2DIR|=BIT0; //输出 P2DS |=BIT0; //全力驱动,否则可能无法驱 ......
大眼哥哥 微控制器 MCU
LabVIEW教程专辑
为大家整理了LabVIEW教程专辑 这里有适合零基础的几个NI官方教程,视频不长,助力你快速上手; 也有适合已经入了门的亲们,比如网红教程《Labview编程的实用技巧系列》,突出“实用”二字 ......
EE大学堂 大学堂专版
【晒样片】申请到样品
好长一段时间没有样片了。听说TI现在对样片申请严格了,以前用163、QQ等邮箱的现在不能申请了。果断在公司申请了个企业邮箱,申请样片果然方便多了。2天功夫就拿到了样片,速度非常赞啊。 不 ......
ltbytyn TI技术论坛
avr studio 5.1 求助啊 !!!
新建工程文件 仿真的时候出现 错误 target voltage seems to be below operating range for this device family. Make sure the target is powered on and try again 试过好几次啦 都是这样 ......
sbllj Microchip MCU

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1341  2045  744  630  2683  7  33  4  32  54 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved