AH31
High Dynamic Range IF Amplifier
Product Features
50 – 1000 MHz
19 dB Gain
+22 dBm P1dB
+42 dBm OIP3
1.9 dB Noise Figure
Single Voltage Supply (+5 V)
Lead-free/Green/
RoHS-compliant
SOT-89 Package
MTTF > 1000 years
Product Description
The AH31 is a high dynamic range amplifier in a low-
cost surface-mount package. The combination of low
noise figure, high gain, and high output IP3 is ideal as an
IF amplifier for receiver and transmitter applications.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85
C
and is
available in the environmentally-friendly lead-free/green
/RoHS-compliant SOT-89 package. All devices are
100% RF & DC tested.
The MMIC amplifier based on GaAs MESFET
technology can be configured for IF and RF applications
with various current and next generation wireless
technologies.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
High linearity and low-noise
amplifier following a mixer
High performance amplifier in IF
path of TX/RX systems
Function
Input
Output / Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
(3)
Output P1dB
Output IP3
(2)
Supply Voltage
Operating Current Range
Typical Performance
(4)
Units Min
MHz
MHz
dB
dBm
dBm
V
mA
50
240
19
+22
+42
+5
150
Typ
Max
1000
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
Typical
MHz
dB
dB
dB
dBm
dBm
dB
75
19.5
-21
-17
+22
+42
2.6
170
19.2
-13
-14
+21
+42
2.3
240
19.3
-19
-13
+22
+42
2.2
500
18.4
-13
-9.2
+21
+41
1.9
900
16.6
-14
-9
+20
+41
2.2
+37
120
180
1. Test conditions : T = 25 ºC, Vdd = +5 V, 50
system.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Typical parameters reflect performance in an application circuit.
Not Recommended for
New Designs
Recommended Replacement
Part: TQP3M9009
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
Junction Temperature for >10
6
hours MTTF
Operation of this device above any of these parameters may cause permanent
damage.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 7 May 2012
Rating
-55 to +150
C
+6 V
4 dB above Input P1dB
+160
C
59
C
/ W
Ordering Information
Part No.
AH31-G
Description
High Dynamic Range IF Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
AH31
High Dynamic Range IF Amplifier
Typical Device Data
DB(|S(2,1)|)
AH31_H005_1_5
0.8
6
0.
S-parameters (Vd = +5 V, Id = 150 mA, unmatched 50
system).
1.0
22
S21 and MSG (dB)
0
3.
0
4.
0.2
5.0
20
10.0
S21
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
10.0
18
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
14
0
0.2
0.4
0.6
Frequency (GHz)
0.8
1
.4
-0
.4
-0
.0
-2
-0
.6
-0.8
-0
.6
-0.8
.0
-2
Swp Min
0.01GHz
Swp Min
0.01GHz
-1.0
Notes:
Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
The amplifier requires a matching network at the input for proper operation. The amplifier is intrinsically well matched at the
output and ideally should “look” into 50
.
Any deviation from this can affect the linearity IP3 performance for the device.
For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The
maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 250 – 1000 MHz, with markers placed at 0.25 – 1.0 GHz in 0.25 GHz increments.
Application Circuit PC Board Layout
Circuit Board Material: .014” FR-4, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Microstrip line details: width = .024”, spacing = .036”
Typical Device Data
S-Parameters (V
D
= +5 V, I
D
= 150 mA, T = 25
C,
calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
300
400
500
600
700
800
900
1000
-2.72
-2.77
-2.81
-2.87
-2.87
-2.95
-2.91
-2.99
-3.03
-3.14
-3.22
-5.46
-9.52
-18.01
-26.32
-35.19
-43.58
-51.71
-60.03
-67.73
-75.45
-82.88
17.01
16.94
16.86
16.74
16.64
16.50
16.40
16.21
16.05
15.81
15.55
175.91
172.89
166.99
161.33
155.16
149.45
143.72
138.07
132.16
126.99
121.64
-28.54
-28.42
-27.86
-27.14
-26.32
-25.45
-24.66
-23.89
-23.27
-22.71
-22.17
6.89
8.53
14.09
18.38
21.01
22.42
22.73
21.29
19.94
17.74
15.73
-7.44
-7.56
-7.59
-7.63
-7.83
-7.92
-8.00
-8.31
-8.46
-8.77
-8.95
-1.0
-5.46
-7.93
-13.42
-19.94
-26.57
-32.04
-38.12
-45.01
-50.89
-57.30
-63.63
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 2 of 7 May 2012
-4
.0
-5.
0
-3
.0
-4
.0
-5.
0
16
2
-0.
2
-0.
-10.0
0.
4
-10.0
-3
.0
0.
4
Maximum Stable Gain
DB(MSG())
AH31_H005_1_5
0.2
S(1,1)
Schematic 1
6
0.
24
Swp Max
1GHz
2.
0
1.0
0.8
Gain and Max. Stable Gain
S11
S22
S(1,1)
AH31_H005_1_5
2.
0
Swp Max
1GHz
S(2,2)
AH31_H005_1_5
S(2,2)
Schematic 1
0
3.
0
4.
5.0
10.0
AH31
High Dynamic Range IF Amplifier
Application Circuit: 65 – 85 MHz (AH31-PCB75)
Typical Performance
Frequency
75 MHz
Gain
19.5 dB
S11
-21 dB
S22
-17 dB
Output P1dB
+22 dBm
Output IP3
+42 dBm
Noise Figure
2.6 dB
Bias
+5 V @ 150 mA
V
S
= +5 V
C5
.018
F
RF IN
C1
L1
.018
F
220 nH
AH31
R1
5.1
L2
330 nH
RF
OUT
R2
0
C3
12 pF
C4
.018
F
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
20
S21
Noise Figure (dB)
Output IP3 (dBm)
Noise Figure
0
-5
S11, S22 (dB)
Output IP3
46
44
42
40
38
36
3.5
3
2.5
2
1.5
1
55
65
75
Frequency (MHz)
85
95
19
Gain (dB)
18
S11
17
16
15
55
65
75
Frequency (MHz)
85
95
S22
-10
-15
-20
-25
55
65
75
Frequency (MHz)
85
95
Application Circuit: 155 – 185 MHz (AH31-PCB170)
Typical Performance
Frequency
170 MHz
Gain
19.2 dB
S11
-13 dB
S22
-14 dB
Output P1dB
+21 dBm
Output IP3
+42 dBm
Noise Figure
2.3 dB
Bias
+5 V @ 150 mA
V
S
= +5 V
C5
.018
F
RF IN
C1
1000 pF
L1
82 nH
AH31
R1
3.3
L2
330 nH
RF
OUT
R2
0
C3
4.7 pF
C4
1000 pF
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
20
19
Gain (dB)
Noise Figure
S21
0
Noise Figure (dB)
Output IP3
46
Output IP3 (dBm)
2.5
2.0
1.5
1.0
0.5
0.0
150
-5
S11
S22
S11, S22 (dB)
44
42
40
38
36
150
18
17
16
15
150
-10
-15
-20
-25
190
160
170
Frequency (MHz)
180
160
170
Frequency (MHz)
180
190
160
170
Frequency (MHz)
180
190
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 3 of 7 May 2012
AH31
High Dynamic Range IF Amplifier
Application Circuit: 220 – 260 MHz (AH31-PCB240)
Typical Performance
Frequency
240 MHz
Gain
19.3 dB
S11
-19 dB
S22
-12.5 dB
Output P1dB
+22 dBm
Output IP3
+42 dBm
Noise Figure
2.2 dB
Bias
+5 V @ 150 mA
V
S
= +5 V
C5
.018
F
RF IN
C1
1000 pF
L1
68 nH
AH31
R1
3.3
L2
220 nH
RF
OUT
R2
0
C3
2.2 pF
C4
1000 pF
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
20
S21
Noise Figure (dB)
Noise Figure vs Frequency
0
-5
S11, S22 (dB)
P1dB vs Frequency
3.5
3.0
2.5
2.0
1.5
-40 C
+25 C
+85 C
P1dB (dBm)
24
22
20
18
16
-40 C
+25 C
+85 C
19
Gain (dB)
18
S22
17
16
15
200
S11
-10
-15
-20
-25
280
220
240
Frequency (MHz)
260
1.0
220
230
240
Frequency (MHz)
250
260
14
220
230
240
Frequency (MHz)
250
260
OIP3 vs Frequency
44
Output IP3 (dBm)
25
C, Freq. spacing = 1 MHz, Pout=+10 dBm/tone
Output IP3 vs. Temperature
44
Output IP3 (dBm)
Frequency = 240, 241 MHz, Pout=+10 dBm/tone
Output IP3 vs. Output Power
50
Output IP3 (dBm)
25
C, Frequency = 240, 241 MHz
42
40
38
36
34
220
230
240
Frequency (MHz)
250
260
42
40
38
36
34
-40
-20
0
20
40
60
80
45
40
35
30
25
0
2
4
6
8
10
Temperature (
C)
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 4 of 7 May 2012
AH31
High Dynamic Range IF Amplifier
Application Circuit: 450 – 550 MHz (AH31-PCB500)
Typical Performance
Frequency
500 MHz
Gain
18.4 dB
S11
-12.7 dB
S22
-9.2 dB
Output P1dB
+21 dBm
Output IP3
+41 dBm
Noise Figure
1.9 dB
Bias
+5 V @ 150 mA
V
S
= +5 V
C5
.018
F
C1
1000 pF
RF IN
L1
22 nH
AH31
L2
150 nH
RF OUT
R2
8.2
C4
1000 pF
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1, C2, and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
19
S21
Noise Figure (dB)
Noise Figure
0
-5
2.5
Frequency (MHz)
Output IP3
46
44
42
40
38
36
450
S11, S22 (dB)
18
Gain (dB)
2.0
1.5
1.0
0.5
0.0
450
S22
17
16
15
450
S11
-10
-15
-20
550
475
500
Frequency (MHz)
525
475
500
Frequency (MHz)
525
550
475
500
Output IP3 (dBm)
525
550
Reference Design: 900 MHz
Typical Performance
Frequency
900 MHz
S21 - Gain
16.6 dB
S11
-14 dB
S22
-9 dB
Output P1dB
+20 dBm
Output IP3
+41 dBm
Noise Figure
2.2 dB
Bias
5 V @ 150 mA
V
S
= +5 V
C5
.01
F
C6
100 pF
RF IN
C1
100 pF
L1
12 nH
L2
39 nH
AH31
R2
10
C4
100 pF
RF
OUT
C2
2.4 pF
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1 and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
17
S21
Gain (dB)
Noise Figure
0
-5
Noise Figure (dB)
2.5
2.0
1.5
1.0
0.5
0.0
800
S22
15
S11
14
13
800
-15
-20
1000
-10
S11, S22 (dB)
16
850
900
Frequency (MHz)
950
850
900
Frequency (MHz)
950
1000
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 5 of 7 May 2012
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