Medium Power, High Linearity Amplifier
Applications
•
Mobile Infrastructure
•
CATV / DBS
•
Defense / Homeland Security
AH
1
10
AH101-G
SOT-89 Package
Product Features
•
•
•
•
•
•
•
•
50 – 1500 MHz
+47 dBm Output IP3
13.5 dB Gain
+26.5 dBm P1dB
MTTF > 1000 Years
Internally Matched
Single +9 V Supply
Lead-free/RoHS-compliant SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The AH101-G is a medium power gain block that offers
excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage
and an internally matched device makes it ideal for both
narrow and broadband applications. Only dc blocking
and bypass capacitors as well as an RF choke are
required for operation.
Superior thermal design allows the product to achieve
+46 dBm IP3 performance at a mounting temperature of
+85°C with an associated MTTF of greater than 1000
years.
This broadband amplifier uses a high reliability GaAs
MESFET technology and is targeted for applications
where high linearity is required. The AH101-G is
available in the environmentally-friendly green/RoHS-
compliant SOT-89 package.
Pin Configuration
Pin No.
1
3
2, 4
Label
RF In
RF Out
GND
Not Recommended for
New Designs
Recommended Replacement Part:
TQP7M9102
Ordering Information
Part No.
AH101-G
Description
Med. Power High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev B 08-12-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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Medium Power, High Linearity Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T=25°C
Supply Voltage (V
DD
)
−55
to 150°C
+18 dBm
+11 V
AH101-G
Max Units
10
+85
+160
V
°C
°C
Recommended Operating Conditions
Parameter
Supply Voltage (V
DD
)
T
CASE
Tj for >10
6
hours MTTF
Rating
Min
7
−40
Typ
9
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
DD
=+9V, Temp= +25°C,
50 Ω system.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Current, I
DD
Thermal Resistance, θ
jc
Conditions
Min
50
12
Typ
800
13.5
20
15
+26.5
+47
3.5
200
Max
1500
16
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
°C/W
Pout = +8
dBm/tone, ∆f =
10 MHz
+43
170
Junction to backside ground paddle
230
25
S-Parameters
Test Conditions: V
DD
=+9 V, I
DD
=200 mA (typ.), T=+25
°
C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
S11 (dB)
-18.92
-22.31
-23.85
-23.32
-21.73
-20.76
-19.65
-18.62
-17.32
-16.53
S11 (ang)
-60.71
-52.06
-47.09
-62.31
-77.34
-90.04
-105.39
-121.62
-131.81
-141.33
S21 (dB)
13.78
13.63
13.50
13.48
13.32
13.19
13.05
12.94
12.76
12.55
S21 (ang)
168.24
169.87
166.42
157.06
146.40
135.74
124.67
114.96
104.01
93.98
S12 (dB)
-19.25
-19.13
-19.17
-19.28
-19.36
-19.47
-19.74
-20.07
-20.36
-20.44
S12 (ang)
4.11
0.17
-5.09
-12.63
-19.07
-25.94
-33.10
-39.77
-45.37
-53.24
S22 (dB)
-14.51
-14.86
-15.22
-14.83
-14.55
-14.02
-13.40
-12.95
-12.44
-12.02
S22 (ang)
-160.07
-177.29
164.61
140.14
118.64
97.71
80.17
63.09
47.65
31.14
Datasheet: Rev B 08-12-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
Medium Power, High Linearity Amplifier
Typical Performance
−
50-1500 MHz
Test conditions unless otherwise noted:
V
DD
=+9V,
I
DD
=200 mA (typ.), Temp= +25°C
AH101-G
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Ouput IP3 (
Pout= +8 dBm/tone,
∆f=
10 MHz)
Output IP2
Noise Figure
50
13.6
23
8
+26.1
+45
+63
4.4
Typical Value
450
13.8
27
14
+26.5
+47
+63
3.4
900
13.5
21
18
+26.5
+47
+60
3.6
1500
12.7
14
16
+25
+47
+59
4.2
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Performance Plots −
50-1500 MHz
Test conditions unless otherwise noted:
V
DD
=+5V,
I
DD
=85 mA (typ.), Temp= +25°C
Datasheet: Rev B 08-12-13
© 2013 TriQuint
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Medium Power, High Linearity Amplifier
AH101-PCB Evaluation Board (50−1500 MHz)
J4
J3
AH101-G
J3 V
DD
R1
0
Ω
C3
Vcc
C2
C1
L1
U1
R1
J4 GND
C3
J1
RF
Input
C1
1
U1
AH101-G
2,4
3
L1 0.018 uF
470 nH
0805
C2
J2
RF
Output
0.018 uF
0.018 uF
Notes:
1. See Evaluation Board PCB Information for material and stack-up.
2. R1 (0
Ω jumper) may be replaced with copper trace in the target application layout.
3. All components are 0603 size unless stated on the schematic.
4. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
5. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
6. For higher frequencies of operation, use a lower value L2 inductor.
Performance Plots −
AH101-PCB
Test conditions unless otherwise noted:
V
DD
=+9V,
I
DD
=200 mA (typ.), Temp= +25°C
Datasheet: Rev B 08-12-13
© 2013 TriQuint
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4 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
Medium Power, High Linearity Amplifier
Pin Configuration and Description
GND
4
AH101-G
1
RF IN
2
GND
3
RF OUT
Pin No.
1
3
2, 4
Label
RF In
GND
RF Out
RF input, matched to 50 ohms. External DC Block is required.
RF output / DC supply, matched to 50 ohms. External DC Block, bias choke required.
Backside Paddle. Multiple vias should be employed to minimize inductance and thermal
resistance; see PCB mounting pattern in Mechanical Information section.
Description
Evaluation Board PCB Information
TriQuint PCB 1075825 Material and Stack-up
0.014"
0.062" ± 0.006"
Finished Board
Thickness
Nelco N-4000-13
Nelco N-4000-13
ε
r
=3.9 typ.
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
1 oz. Cu top layer
1 oz. Cu inner layer
50 ohm line dimensions: width = 0.029”, spacing = 0.035”
Datasheet: Rev B 08-12-13
© 2013 TriQuint
-
5 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
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