T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Applications
•
•
•
•
•
•
Military radar
Civilian radar
Professional and military radio
communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
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•
•
•
•
Frequency: DC to 3.5 GHz
Output Power (P3dB): 37 W at 3.5 GHz
Linear Gain: >16 dB at 3.5 GHz
Operating Voltage: 32 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G4003532-FL is a 37 W (P
3dB
)
discrete GaN on SiC HEMT which operates
from DC to 3.5 GHz. The device is constructed
with TriQuint’s proven 0.25
µm
process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Material No.
1092933
1095349
Part No.
T1G4003532-FL
T1G4003532-
FS/FL-EVB1
Description
Packaged part:
Flanged
2.7-3.5 GHz
Eval. Board
ECCN
EAR99
EAR99
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
-
1 of 13
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Parameter
Drain to Gate Voltage, Vd – Vg
Drain Voltage, Vd
Gate Voltage, Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
o
RF Input Power, CW, T = 25 C
Channel Temperature, Tch
Mounting Temperature (30 sec)
Storage Temperature
Recommended Operating Conditions
Parameter
Vd
Idq
Id (Peak Current)
Vg
Channel
Temperature, Tch
Power Dissipation,
Pdiss (CW)
Power Dissipation,
Pdiss (Pulse)
Rating
40 V
+40 V
-8 to 0 V
4.5 A
-7.5 to 7.5 mA
40 W
38.75 dBm
o
275 C
o
320 C
o
-40 to 150 C
Min Typical Max Units
32
150
2400
-3.9
200
24.5
35
V
mA
mA
V
o
C
W
W
Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied. Refer to the
Median Life Time plot on pg. 3 for additional
information regarding channel temperature.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: T
A
= 25 ° Vd = 32 V, Idq = 150 mA, Vg = -3.9 V
C,
RF Characteristics
Characteristics
Symbol
Min
Typ
23.0
40.1
73.0
72.5
20.0
Max
Units
dB
W
%
%
dB
Load Pull Performance at 1.0 GHz (V
DS
= 32 V, I
DQ
= 150 mA; Pulse: 100µs, 20%)
G
LIN
Linear Gain
Output Power at 3 dB Gain Compression
P
3dB
Drain Efficiency at 3 dB Gain Compression
DE
3dB
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
Gain at 3 dB Compression
G
3dB
Load Pull Performance at 3.5 GHz (V
DS
= 32 V, I
DQ
= 150 mA; Pulse: 100µs, 20%)
Linear Gain
G
LIN
18.8
dB
Output Power at 3 dB Gain Compression
P
3dB
42.6
W
Drain Efficiency at 3 dB Gain Compression
DE
3dB
62.1
%
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
60.5
%
Gain at 3 dB Compression
G
3dB
15.8
dB
Performance at 3.5 GHz in the 2.7 to 3.5 GHz Eval. Board (V
DS
= 32 V, I
DQ
= 150 mA; Pulse: 100µs, 20%)
Linear Gain
G
LIN
16.0
17.0
dB
Output Power at 3 dB Gain Compression
P
3dB
33.0
37.0
W
Drain Efficiency at 3 dB Gain Compression
DE
3dB
53.0
57.0
%
Power Added Efficiency at 3 dB Compression
PAE
3dB
48.0
54.0
%
Gain at 3 dB Compression
G
3dB
13.0
14.0
dB
Narrow Band Performance at 3.50 GHz (V
DS
= 32 V, I
DQ
= 150 mA, CW at P1dB)
Impedance Mismatch Ruggedness
VSWR
10:1
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
-
2 of 13
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Specifications (cont.)
Thermal and Reliability Information
Test Conditions
DC at 85 °C
Note: Thermal resistance,
JC
,
T
CH
(°
C)
200
JC
(°
C/W)
4.7
measured to bottom of package
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
-
3 of 13
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Chart
RF performance that the device typically exhibits when placed in the specified impedance environment. The
impedances are not the impedances of the device, they are the impedances presented to the device via an
RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power
and high efficiency.
Test Conditions:
V
DS
= 32 V, I
DQ
= 150 mA
Load-Pull Data at 1.0 GHz
Test Signal:
Pulse Width = 100 µsec, Duty Cycle = 20%
Load-Pull Data at 2.0 GHz
Load-Pull Data at 3.1 GHz
Load-Pull Data at 3.5 GHz
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
-
4 of 13
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance (cont.)
Performance is based on compromised impedance point and measured at DUT reference plane.
T1G4003532-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
T1G4003532-FL Gain DrEff. and PAE vs. Pout
2000 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
26
25
24
Gain [dB]
23
22
21
20
19
18
35
37
39
41
Pout [dBm]
43
Gain
DrEff.
PAE
Z
S
= 2.67 + j3.64
Ω
Z
L
= 9.98 + j4.78
Ω
80
70
60
50
40
30
20
10
45
0
47
DrEff. & PAE [%]
20
19
18
Gain [dB]
17
Z = 6.85 + j2.67
Ω
L
16
15
14
13
12
35
37
39
41
Pout [dBm]
43
Gain
DrEff.
PAE
Z
S
= 12.40 - j14.04
Ω
80
70
60
50
40
30
20
10
45
0
47
DrEff. & PAE [%]
T1G4003532-FL Gain DrEff. and PAE vs. Pout
3100 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
T1G4003532-FL Gain DrEff. and PAE vs. Pout
3500 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
20
19
18
Gain [dB]
17
16
15
14
13
12
35
37
39
41
Pout [dBm]
43
Gain
DrEff.
PAE
Z
S
= 11.09 - j9.69
Ω
Z
L
= 10.06 + j3.58
Ω
80
70
60
50
40
30
20
10
45
0
47
DrEff. & PAE [%]
20
19
18
Gain [dB]
17
16
15
14
13
12
35
37
39
41
Pout [dBm]
43
Gain
DrEff.
PAE
Z
S
= 9.66 + j0.07
Ω
Z
L
= 7.66 + j0.57
Ω
80
70
60
50
40
30
20
10
45
0
47
DrEff. & PAE [%]
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
-
5 of 13
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
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