T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Applications
•
•
•
•
•
•
•
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
GPS Communications
Avionics
Product Features
•
•
•
•
•
Frequency: DC to 2.0 GHz
Output Power (P
3dB
): 260 W at 1.2 GHz
Linear Gain: 18 dB at 1.2 GHz
Operating Voltage: 36 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G2028536-FS is a 285 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with TriQuint’s proven
TQGaN25HV process, which features advanced field
plate techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Part
T1G2028536-FS
ECCN
EAR99
Description
Packaged part
Flangeless
1.2 – 1.4 GHz
Evaluation Board
T1G2028536-FS-
EAR99
EVB1
Datasheet: Rev A 10-17-13
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV
DG
)
Drain Gate Voltage (V
DG
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
D
)
RF Input Power, CW,
T = 25° (P
IN
)
C
Channel Temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Quiescent Current (I
DQ
)
Peak Drain Current ( I
D
)
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Power Dissipation, CW (P
D
)
Power Dissipation, Pulse (P
D
)
Value
145 V (Min.)
48 V
-7 to 0 V
24 A
-57 to 67 mA
260 W
47 dBm
275 °
C
320 °
C
-40 to 150 °
C
Value
36 V (Typ.)
576 mA (Typ.)
13.3 A (Typ.)
-3.0 V (Typ.)
250 ° (Max)
C
226 W
288 W
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 1.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 576 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CompressionCompression
Gain at 3 dB
Min
Typical
20.8
316.0
66.7
65.6
17.8
Max
Units
dB
W
%
%
dB
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
RF Characterization – Load Pull Performance at 2.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 576 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CompressionCompression
Gain at 3 dB
Min
Typical
19.4
268.9
56.3
55.1
16.4
Max
Units
dB
W
%
%
dB
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
Datasheet: Rev A 10-17-13
© 2013 TriQuint
- 2 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
RF Characterization – Performance at 1.2 GHz
(1, 2)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 576 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
17.0
230.0
49.0
14.0
Typical
18.7
264.5
54.0
15.7
Max
Units
dB
W
%
dB
Notes:
1. Performance at 1.2 GHz in the 1.2 to 1.4 GHz Evaluation Board
2. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
RF Characterization – Impedance Mismatch Ruggedness at 1.2 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 576 mA
C,
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA, CW at P
1dB
Typical
10:1
Datasheet: Rev A 10-17-13
© 2013 TriQuint
- 3 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Notes:
Thermal resistance measured to bottom of package
Test Conditions
DC at 85 °C Case
Value
0.73
250
Units
°
C/W
°
C
Median Lifetime
Maximum Channel Temperature
T
BASE
= 85° P
D
= 288 W
C,
320.0
Max. Channel Temperature vs. Pulse Width
Maximum Channel Temperature (oC)
300.0
280.0
260.0
240.0
220.0
200.0
180.0
160.0
140.0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
1.00E-02
1.00E-01
Pulse Width (sec)
Datasheet: Rev A 10-17-13
© 2013 TriQuint
- 4 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Load Pull Smith Charts
(1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: V
DS
= 36 V, I
DQ
= 576 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev A 10-17-13
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
