AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Applications
•
802.16 WiMAX infrastructure
24-pin 5x5mm leadless QFN SMT package
Product Features
•
•
•
•
•
•
•
•
3.3 – 3.8 GHz
25 dB Gain
EVM <2.5 %@ 25 dBm Pout
Internal Active Bias
+5V Single Supply Voltage
+33 dBm P1dB
RoHS-compliant/Lead-free
5x5 mm QFN SMT package
Functional Block Diagram
GND / NC
GND / NC
Vbias2
17
Vcc1
20
19
18
Iref1
Vbias1
GND / NC
RF In
RF In
1
2
3
4
5
16
Iref2
15
14
13
12
11
Vcc2
GND / NC
RF Out
RF Out
RF Out
GND / NC
GND / NC
GND / NC
GND / NC
General Description
The AH315 is a high dynamic range broadband driver
amplifier in a surface mount package. The two-stage
amplifier has 25 dB of gain, while achieving +25 dBm of
linear output power for 3.3–3.8 GHz WiMAX/WiBro
applications.
AH315 uses a high reliability +5V InGaP/GaAs HBT
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
AH315 to operate directly off a commonly used single
+5V supply. The RoHS-compliant/Lead-free 5x5mm QFN
package is surface mountable to allow for low
manufacturing costs to the end user.
The AH315 is targeted for use in a configuration for the
driver stage amplifier in 802.16 WiMAX base stations
where high linearity and medium power is required.
Pin Configuration
Pin No.
1
2
4, 5
3, 6, 7, 8, 9, 10, 14, 18, 20
11, 12, 13
15
16
17
19
Backside Paddle
Function
Iref 1
Vbias1
RFin
GND/NC
RFout
Vcc2
Iref 2
Vbias2
Vcc1
GND
Ordering Information
Part No.
AH315-G
AH315-PCB
Description
3.3 – 3.8 GHz WiMAX 2W Driver Amp
3.4 – 3.6 GHz Evaluation Board
Standard T/R size
= 1000 pieces on a 7” reel
.
Data Sheet: Rev A 09/02/10
© 2010 TriQuint Semiconductor, Inc.
-
1 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
GND / NC
10
6
7
8
9
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω,T = 25ºC
Device Voltage, Vcc, Vbias
Collector Current, Icc (Icc1 + Icc2)
Iref 1
Iref 2
Device Power
Thermal Resistance R
TH
Recommended Operating Conditions
Parameter
o
Rating
-55 to +125 C
+19 dBm
+8 V
1600 mA
100 mA
50 mA
8W
14.4
o
C/W
Min
Typ
+5
700
Max Units
+6
+200
+85
V
mA
o
C
o
C
V
cc
+4.75
I
cc
@ 24 dBm
T
J
(for >10
6
hours MTTF)
Operating Temp. Range
-40
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 3.4 – 3.6 GHz, in tuned application circuit.
Parameter
Operational Frequency Range
Test Frequency
Power Gain
Input Return Loss
Output Return Loss
EVM
Efficiency
Output P1dB
Noise Figure
Device Voltage, Vcc
Iref 1
Iref 2
Quiescent Current, Icq
Conditions
Min
3.3
Typical
3.5
25
-15.2
-11.3
2.3
8
+33
7.3
+5
27
10
600
Max
3.8
Units
GHz
GHz
dB
dB
dB
%
%
dBm
dB
V
mA
mA
mA
See Note 1.
2.5
See Note 2.
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
2. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=70Ω off pin 1 and
R2=150Ω off pin 16.
Data Sheet: Rev A 09/02/10
© 2010 TriQuint Semiconductor, Inc.
-
2 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Device Characterization Data
V
CC
= +5 V, I
CQ
= 600 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads
Gain vs. Frequency
30
25
0.6
Input Smith Chart
1
Output Smith Chart
0.8
Gain (dB)
20
5 GHz
0.4
15
10
5
0
0
1
2
3
4
5
0.2
5 GHz
0
-0.2
-1 -0.75-0.5- 0.25 0 0.25 0.5 0.75 1
-0.4
0.05 GHz
-0.6
0.05 GHz
-0.8
Frequency (GHz)
-1
Notes:
The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0-5 GHz,
with markers placed at 0.05 and 5 GHz.
S-Parameter Data
V
CC
= +5 V, I
CQ
= 600 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
3200
3250
3300
3350
3400
3450
3500
3550
3600
3650
3700
3750
3800
3850
3900
3950
4000
S11 (dB)
-7.15
-8.30
-9.03
-10.02
-10.60
-11.13
-11.83
-12.06
-12.42
-12.56
-12.37
-11.85
-10.99
-10.10
-9.19
-8.41
-7.90
S11 (ang)
-47.75
-67.91
-85.52
-100.73
-114.25
-121.9
-128.99
-133.37
-133.94
-134.22
-132.5
-131.84
-131.88
-134.27
-139.24
-146.73
-157.43
S21 (dB)
24.62
25.04
25.23
25.25
25.16
25.05
24.95
24.84
24.79
24.71
24.67
24.70
24.73
24.90
25.02
25.29
25.43
S21 (ang)
-121.57
-142.33
-161.71
179.97
163.19
147.33
132.15
117.52
103.11
89.24
75.18
61.44
47.15
32.58
17.14
0.702
-17.44
S12 (dB)
-46.71
-45.76
-45.35
-45.27
-45.49
-45.94
-46.35
-46.84
-47.68
-48.26
-49.27
-50.2
-51.31
-51.77
-52.57
-51.90
-50.26
S12 (angle)
81.59
65.79
52.08
38.15
25.90
14.60
3.68
-6.51
-18.83
-29.21
-43.37
-58.07
-77.27
-99.53
-125.81
-156.29
173.75
S22 (dB)
-4.82
-4.33
-4.13
-4.18
-4.38
-4.68
-5.00
-5.32
-5.62
-5.84
-6.05
-6.24
-6.49
-6.82
-7.38
-8.19
-9.28
S22 (ang)
65.17
64.24
63.23
62.35
62.37
63.12
64.61
66.87
69.29
72.04
74.47
76.46
77.95
78.63
79.17
80.03
83.45
Data Sheet: Rev A 09/02/10
© 2010 TriQuint Semiconductor, Inc.
-
3 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
3.4 – 3.6 GHz Application Circuit (AH315-PCB)
Notes:
1.
2.
3.
4.
C12 to be placed as close as possible to the device.
C11 = 47 pF is critical. Do Not Replace with other value.
Place C19 between marking 3 and 4.
See PC Board Layout on page 8 for more details.
Bill of Material
Ref Des
U1
C1, C2, C4, C11, C15,
C16, C17, C18
C3
C5, C6, C7
C8
C12
L1
R1
R2
R3, R4, R5
R6
Value Description
WiMax 2W Driver Amplifier
47 pF
0.8 Pf
4.7 uF
0.1 uF
18 nH
68
150
0
0
Cap, Chip, 0805, 2%, 50V
Manufacturer Part Number
TriQuint
various
06035J0R8ABTTR
various
various
various
TOKO
various
various
various
various
LL1608-FSL18NJ
AH315-G
Cap, Chip, 0603, ± 0.05 pF,50V, Accu-P AVX
Cap, Chip, 6032, 20%, 35V, TANT
Cap, Chip, 0805, 5%, 25V, X7R
Ind, Chip, 0603, 5%, mulilayer
Res, Chip, 0603, 5%, 1/16W
Res, Chip, 0603, 5%, 1/16W
Res, Chip, 0805, 1/10W
Res, Chip, 0603, 5%, 1/16W
1000 pF Cap, Chip, 0603, 5%, 50V, NPO-COG
Data Sheet: Rev A 09/02/10
© 2010 TriQuint Semiconductor, Inc.
-
4 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Typical Performance 3.4 – 3.6 GHz
Test conditions unless otherwise noted:
Vpd, Vbias, Vcc = 5V, I
CQ
= 700 mA, +25 °C
Frequency
Gain
Input Return Loss
Output Return Loss
Noise Figure
Output P1dB
EVM @ 25 dBm Pout (1)
MHz
dB
dB
dB
dB
dBm
%
3.4
25.4
14
10
3.5
25
15.2
11.3
7.3
+33
2.3
3.6
25
15
10
Note: 1.
Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
Gain vs. Frequency
27
0
S11
S22
EVM (%)
Return Loss vs. Frequency
5
EVM vs. Pout vs. Temperature
OFDM, QAM-64, 54 Mb/S
Freq = 3.5 GHz
26
S11, S22 (dB)
-5
4
3
2
1
0
+85 C
+25 C
- 40 C
Gain (dB)
25
-10
24
-15
23
3.3
3.4
3.5
3.6
3.7
3.8
Frequency (GHz)
-20
3.3
3.4
3.5
3.6
3.7
3.8
Frequency (GHz)
14
16
18
20
Pout (dBm)
22
24
26
EVM vs. Pout vs. Frequency
5
OFDM, QAM-64, 54 Mb/S
Gain vs. Pout vs. Temperature
28
27
28
27
26
Gain (dB)
Gain vs. Pout vs. Frequency
4
EVM (%)
Gain (dB)
3
2
1
0
14
16
18
3.4 GHz
3.5 GHz
3.6 GHz
26
25
24
23
22
OFDM, QAM-64, 54 Mb/S
Freq = 3.5 GHz
+85 C
+25 C
- 40 C
25
24
23
OFDM, QAM-64, 54 Mb/S
3.4 GHz
3.5 GHz
3.6 GHz
22
22
24
26
28
Pout (dBm)
30
32
34
14
16
18
20
Pout (dBm)
22
24
26
20
Pout (dBm)
22
24
26
Current vs. Pout vs. Temperature
1000
900
Current (mA)
Current vs. Pout vs. Frequency
1000
OFDM, QAM-64, 54 Mb/S
OFDM, QAM-64, 54 Mb/S
Freq = 3.5 GHz
+85 C
+25 C
- 40 C
900
Current (mA)
800
700
600
500
20
800
700
600
500
3.4 GHz
3.5 GHz
3.6 GHz
22
24
26
28
30
18
20
22
24
26
28
Pout (dBm)
Pout (dBm)
Data Sheet: Rev A 09/02/10
© 2010 TriQuint Semiconductor, Inc.
-
5 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
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