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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
5
50
10.4
3
0.3
10
0.3
– 40 to +150
– 40 to +150
0.26
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 128°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
I
II
III
I
II
III
Symbol
I
DRM
V
TM
V
FGT
I
V
RGT
I
V
RGT
III
I
FGT
I
I
RGT
I
I
RGT
III
V
GD
R
th(j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
5/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
30
30
—
3.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 7 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C/150°C,
V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C/150°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T
2
tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
REJ03G0451-0400 Rev.4.00 Dec 19, 2008
Page 2 of 7
BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
10
2
3
2
Rated Surge On-State Current
100
Surge On-State Current (A)
7
5
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
10
1
7
5
3
2
Tj = 150°C
10
0
7
5
3
2
Tj = 25°C
10
–1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
I
RGT III
I
RGT I
V
GM
= 10V
P
GM
= 3W
P
G(AV)
= 0.3W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
2
7
5
3
2
I
FGT I
I
FGT I
I
RGT I
I
RGT III
10
1
7
5
3
2
10
–1
7
V
GD
= 0.1V
5
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
10
0
–
60
–
40
–
20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G0451-0400 Rev.4.00 Dec 19, 2008
Page 3 of 7
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