associated parasitics usually associated with hybrid
MIC designs incorporating beam lead and PIN
diodes that require chip and wire assembly.
The MASW-003103-1364 is fabricated using M/A-
COM Tech’s patented HMIC™ (Heterolithic
Microwave Integrated Circuit) process, US Patent
5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation
performance through low millimeter frequencies.
Selective backside metalization is applied producing
a Surface Mount device.
The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection.
These protective coatings prevent
damage to the junction and the anode airbridge
during handling and assembly.
1.
1
Power Handling Testing performed @ 2GHz
J2
J1
J4
Pin Configuration
2
Pin
J1
J2
J3
J4
Function
RFC
RF1
RF2
RF3
2. The exposed pad centered on the chip bottom must be con-
Ordering Information
Part Number
MASW-003103-13640G
MASW-003103-13645P
MASW-003103-13640P
MASW-003103-001SMB
Package
50 piece gel pack
500 piece reel
3000 piece reel
Sample Test Board
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-003103-1364
HMIC
TM
Silicon PIN Diode SP3T Switch
50 MHz - 20 GHz
Electrical Specifications: T
A
= 25°C, P
IN
= 0 dBm, Z
0
= 50 Ω, 20mA/-10V
Parameter
Insertion Loss
Frequency
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
—
—
2 GHz
Units
dB
Min.
—
—
—
50
37
25
19
14
14
—
—
—
—
—
—
Typ.
0.50
0.8
1.2
54
40
31
25
22
21
57
42
30
20
—
36
Max.
0.6
1.1
1.4
—
—
—
—
—
—
—
—
—
—
80
—
Rev. V2
Isolation
dB
Input Return Loss
dB
Output to Output Isolation
Switching Speed
3
Voltage Rating
4
Input 0.1dB Compression Point
3.
4.
dB
ns
V
dBm
Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers.
Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.
Absolute Maximum Ratings
5,6
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF CW Incident Power
Bias Current +25°C
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
|-80 V|
38dBm CW @ 2GHz, +25°C
33dBm CW @ 20GHz,+25°C
± 50 mA
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are rated at Class 1A Human Body.
Proper ESD control techniques should be used
when handling these devices.
Max Operating Conditions for combination RF
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per
Diode @ +85ºC @ 2GHz
5.
6.
Exceeding any one or combination of these limits may cause
permanent damage to this device.
M/A-COM Tech does not recommend sustained operation
near these survivability limits.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-003103-1364
HMIC
TM
Silicon PIN Diode SP3T Switch
50 MHz - 20 GHz
Typical Performance Curves
Insertion Loss @ 20mA, -10V
RF Input to RF Outputs (J1 to J2, J3, J4)
0.0
J1 TO J2
J1 TO J3
J1 TO J4
Rev. V2
Isolation @ 20mA, -10V
RF Input to RF Outputs (J1 to J2, J3, J4)
0
J1 TO J2
J1 TO J3
J1 TO J4
-0.5
-20
Insertion Loss (dB)
-1.0
Isolation (dB)
0
5
10
15
20
25
30
-40
-1.5
-60
-2.0
-80
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Input Return Loss @ 20mA, -10V
RF Input to RF Outputs (J1 to J2, J3, J4)
0
J1 TO J2
J1 TO J3
J1 TO J4
Output Return Loss @ 20mA, -10V
RF Input to RF Outputs (J1 to J2, J3, J4)
0
J1 TO J2
J1 TO J3
J1 TO J4
Input Return Loss (dB)
-10
Output Return Loss (dB)
0
5
10
15
20
25
30
-10
-20
-20
-30
-30
-40
-40
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Output to Output Isolation @ 20mA, -10V
J2 to J3 and J3 to J4
0
J2 TO J3
MASW-003103-1364 Maximum Input Power Curve
Baseplate Temperature fixed @ 25degC
12
Output to Output Isolation (dB)
J3 TO J4
10
Input Power (Watts)
-20
8
6
4
2
20GHz, 2W
2GHz, 5.8W
-40
10GHz, 2.75W
-60
0
-80
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Insertion Loss (dB)
3
Frequency (GHz)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-003103-1364
HMIC
TM
Silicon PIN Diode SP3T Switch
50 MHz - 20 GHz
Bias Control
Optimal operation of the MASW-003103-1364 is achieved by simultaneous application of negative DC voltage
and current to the low loss switching arm J2, J3, or J4, and positive DC voltage and current to the remaining
switching arms as shown in the applications circuit below. DC return is achieved via R2 on the J1/RF Com Path.
In the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased
with voltage. In the isolation arms, the shunt diode is forward biased with current and the series diode is reverse
biased with voltage.
Rev. V2
Driver Connections
Control Level (DC Currents and Voltages)
B2
-15V
7
at -20mA
6V at +20mA
6V at +20mA
B3
+20mA
-15V
7
at -20mA
6V at +20mA
B4
6V at +20mA
6V at +20mA
-15V
7
at -20mA
Condition of
RF Output
J1-J2
Low Loss
Isolation
Isolation
Condition of
RF Output
J1-J3
Isolation
Low Loss
Isolation
Condition of
RF Output
J1-J4
Isolation
Isolation
Low Loss
7. The voltage applied to the off arm can vary as long as 20mA is applied through the shunt diode on the off arm.
Application Circuit
8,9,10,11,12
Example:
J1 to J2→ Low Loss
R1 = 250
Ω
R2 = 450Ω
B2 = -15V
B3, B4 = 6V
4
Notes:
8. Assume Vf ~ 1V at 20mA
9. R1 = 5V / 0.02A = 250Ω; R2 = 9V / 0.02A = 450Ω
10. P
R1
= 0.02A x 0.02A x 250 = 0.1 W
11. P
R2
= 0.02A x 0.02A x 450 = 0.18 W
12. Inductors are bias RF chokes. The operating band width of a broad-band PIN diode switch is often dependent on the bias compo-
nents, particularly the RF bias chokes. It is suggested that the frequency response be checked with all the bias components attached
before installing the PIN diode.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-003103-1364
HMIC
TM
Silicon PIN Diode SP3T Switch
50 MHz - 20 GHz
Outline Drawing Footprint
Rev. V2
Top View
2065
J3
Side View
125
680
Backside View
1960
200
J3
200
290 200
684
1655
J2
J1
J4
J4
285
200
1540
200
200 200 200
J2
200 290
200 285
J1
680
200 200 200
Units in µm
Ground radius is 200um centered
on the I/O Pad.
MASW-003103-1364
DIM
Width
Length
Thickness
Inches
MIN
0.06417
0.08031
0.00394
MAX
0.06614
0.08228
0.00591
MIN
1.630
2.040
0.100
mm
MAX
1.680
2.090
0.150
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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