* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Electrical Specifications- Pulsed Operation:
Freq. = 32 - 38 GHz, T
A
= +25°C, Z
0
= 50 Ω, Duty Cycle = 5%, Pulse = 5 µs, P
IN
= 20 dBm
Parameter
Gain
Input Return Loss
Gain Flatness
Output Return Loss
Output Power at Saturation
PAE at Saturation
Drain Voltage
Gate Voltage
Drain Current
Drain Current
Test Conditions
—
—
—
—
33.0 - 36.0 GHz
36.0 - 36.5 GHz
—
—
—
—
Under RF Drive (33.0 - 36.5 GHz)
Units
dB
dB
dB
dB
dBm
%
V
V
A
A
Min.
—
—
—
—
35
34
—
—
-1.1
-
2
Typ.
18
10
1.5
14
37
23
6
-0.9
2.5
3.7
Max.
—
—
—
—
—
—
—
-0.8
-
4.5
Electrical Specifications - CW Operation:
Freq. = 32 - 38 GHz, T
A
= +25°C, Z
0
= 50 Ω, P
IN
= 20 dBm
Parameter
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output Power at Saturation
PAE at Saturation
Drain Voltage
Gate Voltage
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
Test Conditions
—
—
—
—
—
—
—
—
Units
dB
dB
dB
dB
dBm
%
V
V
Min.
—
—
—
—
—
—
—
-1.1
Typ.
18
1.5
10
14
36.5
21
6
-0.9
Max.
—
—
—
—
—
—
—
-0.8
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Absolute Maximum Ratings
2,3
Parameter
Input Power, CW, 50 Ω
Drain Voltage
Gate Voltage
Drain Current
Gate Current
Power Dissipation
Storage Temperature
Operating Temperature
Channel Temperature
4,5
Rating
+23 dBm
+6.5 V
-2 to 0 V
4.5 A
-20 mA to 5 mA
20 W
-65°C to +165°C
-40°C to +85°C
+175°C
Rev. V1
Recommended Operating Conditions
Parameter
Drain Voltage
Gate Voltage
Drain Current
Drain Current
(Under RF Drive)
Rating
+6 V
-0.9 V
2.5 A
3.7 A
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
HBM class 1B devices.
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near
these survivability limits.
4. Operating at nominal conditions with T
C
≤ +175°C will ensure
MTTF > 1 x 10
6
hours.
5. Channel Temperature (T
C
) = T
A
+ Өjc * ((V * I) - P
out
)
Typical thermal resistance (Өjc) = 4.3°C/W.
a) For T
A
= 25°C,
T
C
= 90°C @ 6 V, 2.5 A (Quiescent
bias only)
b) For T
A
= 85°C,
T
C
= 150°C @ 6 V, 2.5 A (Quiescent
bias only)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Application Circuit
4,5,6,7
Assembly Drawing
Rev. V1
4. V
G
must be biased from both sides (pins 2,6,10,14).
5. V
D
must be biased from both sides (pins 3,4,5,7,9,11,12,13).
6. It is recommended that bias control circuits are used at VG
and V
D
. Additional bypass capacitors may also be required
depending on the application, 1 to 47 µF tantalum capacitors
are commonly used here.
7. Each bias pad, V
G
or V
D
must have a decoupling capacitor
as close to the device as possible, as is shown in the
Assembly Drawing.
Parts List
Component
C1, C2
C3 - C12
Value
2.2 µF
100 pF
Operating the MAAP-015016
The MAAP-015016 is static sensitive.
Please
handle with care. To operate the device, follow
these steps.
Biasing -
It is recommended to use active biasing to keep the
currents constant as the RF power and
temperature vary; this gives the most reproducible
results.
Using Up-Bias Procedure:
1. Set V
G
to -1.5 V
2. Set V
D
to +6 V
3. Adjust V
G
positive until quiescent I
D
is
2.5 A (~V
G
= -0.9)
4. Apply RF signal to RF Input
Pulse Operation -
The performance of the MAAP-015016-DIE is
characterized under pulsed conditions with a
duty cycle of 5% consisting of a pulse width of 5 µs
applied to the drain. Under pulsed conditions the
gate is constantly biased using a gate voltage
directly applied to the PA. It is recommended that
the die is mounted with an adequate thermal
solution.
Using Down-Bias Procedure:
1.
2.
3.
4.
Turn off RF supply
Reduce V
G
to -1.5 V
Turn V
D
to 0 V
Turn V
G
to 0 V
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Typical Performance Curves - Pulsed Operation
S-Parameters vs. Frequency
30
20
10
0
-10
-20
-30
S21
S11
S22
Rev. V1
31
32
33
34
35
36
37
38
39
Frequency (GHz)
Output Power vs. Frequency
39
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
PAE vs. Frequency
30
25
20
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
37
35
15
33
10
31
5
0
29
32
33
34
35
36
37
38
32
33
34
35
36
37
38
Frequency (GHz)
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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