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XD1008-BD_15

产品描述0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
产品类别热门应用    无线/射频/通信   
文件大小888KB,共10页
制造商MACOM
官网地址http://www.macom.com
下载文档 详细参数 选型对比 全文预览

XD1008-BD_15概述

0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

0.03 MHz - 40000 MHz 射频/微波宽带功率放大器

XD1008-BD_15规格参数

参数名称属性值
最小工作温度-55 Cel
最大输入功率17 dBm
最大工作频率40000 MHz
最小工作频率0.0300 MHz
加工封装描述DIE-11
状态ACTIVE
结构COMPONENT
端子涂层GOLD
阻抗特性50 ohm
微波射频类型WIDE BAND MEDIUM POWER

文档预览

下载PDF文档
XD1008-BD
Receiver
30 kHz-40 GHz
Features
15 dB Gain
22.5 dBm P1dB at 22 GHz
4.5 dB Noise Figure at 26 GHz
Unconditional Stability over Temperature Range
100% On-Wafer RF, DC and Output Power
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Rev. V1
Chip Device Layout
Description
M/A-COM Tech’s 30 kHz - 40 GHz GaAs MMIC
distributed amplifier has a gain of 15 dB with a 4.5
dB noise figure at 26 GHz. This MMIC uses M/A-
COM Tech’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave, military, wideband and
instrumentation applications.
Absolute Maximum Ratings
1
Parameter
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Current (Ig1)
Gate Bias Voltage (Vg2)
Gate Current (Ig2)
CW Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
-65 ºC
-55 ºC
+150 ºC
-9.5 V
-38 mA
-3.5 V
-20 mA
17 dBm
+165 ºC
+1 mA
+4.0 V
Min.
Max.
+10.0 V
340 mA
Ordering Information
Part Number
XD1008-BD-000V
XD1008-BD-EV1
Package
“V” - vacuum release gel
paks
evaluation module
(1) Absolute maximum ratings for continuous operation unless otherwise
noted.
Bias Settings
Parameter
Drain Current (Id), V=7 V, VG1=-2.5 V*, VG2=open circuit
Drain Current (Id), V=4 V, VG1=-2.5 V*, VG2=open circuit
Drain Voltage (Vd)
Gate Bias (Vg1)
Gate Bias (Vg2)
*approximate
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Units
mA
mA
V
V
V
Min.
9.0
DC
-
10.0
-
Typ.
-
2.0
15.0
13.5
+3.0
Max.
Function
Supply drain current to device
Adjusted to set drain current
Adjusted for gain control

XD1008-BD_15相似产品对比

XD1008-BD_15 XD1008-BD-000V XD1008-BD-EV1
描述 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
最小工作温度 -55 Cel - -55 Cel
最大输入功率 17 dBm - 17 dBm
最大工作频率 40000 MHz - 40000 MHz
最小工作频率 0.0300 MHz - 0.0300 MHz
加工封装描述 DIE-11 - DIE-11
状态 ACTIVE - ACTIVE
结构 COMPONENT - COMPONENT
端子涂层 GOLD - GOLD
阻抗特性 50 ohm - 50 ohm
微波射频类型 WIDE BAND MEDIUM POWER - WIDE BAND MEDIUM POWER
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