AN4544
Application note
IGBT datasheet tutorial
Introduction
This application note is intended to provide detailed explanations about parameters and
diagrams included in the datasheet of trench-gate field stop IGBTs offered in discrete
packages such as: TO-247, TO-220, D
2
PAK, etc. This document helps the user to better
understand the datasheet parameters and characteristics by explaining the interaction with
the influence of conditions as temperature or gate voltage.
Thanks to this application note the designer can also use the information included in
datasheet according to his needs.
Datasheet values, for dynamic characterization tests, refer to a specific testing setup with its
individual characteristics. Therefore, these values can vary according to the user's
application.
Most of the included diagrams, tables and explanations are related to the STGW40V60DF
datasheet. Concerning the latest version of datasheet for this product, please refer to our
website.
September 2014
DocID026535 Rev 1
1/35
www.st.com
Contents
AN4544
Contents
1
General IGBT overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.1
IGBT technology evolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Datasheet explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1
2.2
2.3
2.4
Datasheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
IGBT nomenclature meaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
First page of datasheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4.1
2.4.2
2.4.3
2.4.4
2.4.5
2.4.6
2.4.7
2.4.8
2.4.9
Collector-to-emitter voltage (V
CES
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Continuous collector current rating (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . 10
Forward biased safe operating area (FBSOA) . . . . . . . . . . . . . . . . . . . 13
Peak of collector current ratings (I
CP
) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Gate-to-emitter voltage (V
GE
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum power dissipation (P
TOT
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Operating junction and storage temperature range (T
J
) and (T
STG
) . . . 15
Thermal resistance (R
th
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum transient thermal impedance (Z
thJC
) . . . . . . . . . . . . . . . . . . . 16
Collector-to-emitter saturation voltage - V
CE(sat) . . . . . . . . . . . . . . . . . . . . . . . . 19
Forward on-voltage (V
F
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Collector cut-off current (I
CES
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Gate-to-emitter leakage current (I
GES
) . . . . . . . . . . . . . . . . . . . . . . . . . 21
Gate-to-emitter threshold voltage (V
GE(th)
) . . . . . . . . . . . . . . . . . . . . . . 21
Input, output and reverse transfer capacitances (C
ies
), (C
oes
) and (C
res
) .
22
Input capacitance (C
ies
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Output capacitance (C
oes
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Reverse transfer capacitance (C
res
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Gate charge (Q
ge
), (Q
gc
) and (Q
g
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Turn-on delay time (t
d(on)
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Current rise time (t
r
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Turn-on current (di/dt
(on)
) and voltage slope (dv/dt
(on)
) . . . . . . . . . . . . . 27
DocID026535 Rev 1
2.5
Static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5.1
2.5.2
2.5.3
2.5.4
2.5.5
2.6
Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.6.1
2.6.2
2.6.3
2.6.4
2.6.5
2.7
IGBT switching characteristics (inductive load) . . . . . . . . . . . . . . . . . . . . 25
2.7.1
2.7.2
2.7.3
2/35
AN4544
2.7.4
2.7.5
2.7.6
2.7.7
2.7.8
Contents
Turn-off delay time (t
d(off)
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Fall time (t
f
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Switching energy (E
on
) and (E
off
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Short-circuit withstand time - t
sc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Diode switching characteristics (inductive load) . . . . . . . . . . . . . . . . . . 31
3
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DocID026535 Rev 1
3/35
35
List of tables
AN4544
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
V
CES
maximum ratings showed in absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . 10
Nominal continuous IC in absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pulsed I
C
details in absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
V
GE
information showed in maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
IGBT total power showed in absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ratings for storage and junction temperature in the table of absolute maximum ratings . . 15
Absolute maximum ratings for J-C and J-A thermal resistances . . . . . . . . . . . . . . . . . . . . 16
Static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
IGBT switching characteristics (inductive load) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Maximum ratings for short-circuit withstand time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Diode switching characteristics (inductive load) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
4/35
DocID026535 Rev 1
AN4544
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Cross section of a trench field-stop IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Equivalent (a) and simplified equivalent circuits (b) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
IGBT technology evolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Nomenclature scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Cover page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Normalized V
(BR)CES
vs. junction (case) temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
How to calculate the continuous collector current using the output characteristic curve . . 11
Collector current vs. case temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Forward bias safe operating area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
IGBT transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power dissipation vs. case temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Thermal resistance scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Maximum normalized Z
thJC
function of pulse duty factor (d) and loading time (t
p
). . . . . . . 17
Cross section of a trench field-stop IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Forward on-voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Normalized V
GE(th)
vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
IGBT section and equivalent model with parasitic capacitances between terminals . . . . . 22
STGW40V60DF capacitance variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Gate charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Test circuit for switching characteristics (inductive load) . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Voltage turn-on and turn-off waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Switching times vs. collector current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Switching times vs. gate resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Switching losses vs. collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Switching losses vs. gate resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Switching losses vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Switching losses vs. collector- emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Short-circuit performance example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Typical reverse recovery waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Reverse recovery current vs. diode current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Reverse recovery time vs. diode current slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Reverse recovery charge vs. diode current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Reverse recovery energy vs. diode current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DocID026535 Rev 1
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