LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, N−Channel with ESD
Protection, SOT−723
Features
•
•
•
•
•
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V
GS(TH)
< 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
•
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
•
These are Pb−Free Devices
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
LNTK3043NT5G
S-LNTK3043NT5G
V
(BR)DSS
R
DS(on)
TYP
1.5
W
@ 4.5 V
20 V
2.4
W
@ 2.5 V
5.1
W
@ 1.8 V
6.8
W
@ 1.65 V
285 mA
I
D
Max
Top View
3
•
Interfacing, Switching
•
High Speed Switching
•
Cellular Phones, PDAs
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
I
DM
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
545
210
155
310
400
−55 to
150
286
260
mA
mW
mA
°C
SOT−723
CASE 631AA
KA
M
1
KA
M
Shipping
†
8000 / Tape & Reel
I
D
Symbol
V
DSS
V
GS
Value
20
±10
255
185
285
440
mW
mA
Unit
V
V
1 − Gate
2 − Source
3 − Drain
1
2
MARKING
DIAGRAM
t
p
= 10
ms
= Device Code
= Date Code
Operating Junction and Storage Temperature T
J
, T
STG
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
I
S
T
L
ORDERING INFORMATION
mA
°C
Device
LNTK3043NT5G
S-LNTK3043NT5G
Package
SOT−723*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
Symbol
R
qJA
R
qJA
R
qJA
Max
280
228
400
°C/W
Unit
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 100
mA
I
D
= 100
mA,
Reference to 25°C
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25°C
T
J
= 125°C
I
GSS
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
20
27
1
10
1
V
mV/°C
mA
mA
Test Condition
Symbol
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±5
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 4.5V, I
D
= 10 mA
V
GS
= 4.5V, I
D
= 255 mA
V
GS
= 2.5 V, I
D
= 1 mA
V
GS
= 1.8 V, I
D
= 1 mA
V
GS
= 1.65 V, I
D
= 1 mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(ON)
0.4
−2.4
1.5
1.6
2.4
5.1
6.8
1.3
V
mV/°C
3.4
3.8
4.5
10
15
S
W
Forward Transconductance
V
DS
= 5 V, I
D
= 100 mA
g
FS
0.275
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS= 4.5 V
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V, I
S
= 286 mA
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%
6. Switching characteristics are independent of operating junction temperatures
Rev .O 2/5
V
GS
= 0 V, V
DD
= 20 V, dISD/dt = 100 A/ms,
I
S
= 286 mA
T
J
= 25°C
T
J
= 125°C
t
RR
t
a
t
b
Q
RR
V
SD
0.83
0.69
9.1
7.1
2.0
3.7
nC
ns
1.2
V
V
GS
= 4.5 V, V
DD
= 5 V, I
D
= 10 mA,
R
G
= 6
W
t
d(ON)
t
r
t
d(OFF)
t
f
13
15
94
55
ns
V
GS
= 0 V, f = 1 MHz, V
DS
= 10 V
C
ISS
C
OSS
C
RSS
11
8.3
2.7
pF
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
TYPICAL PERFORMANCE CURVES
0.3
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 3 V to 10 V
T
J
= 25°C
0.2
2.2 V
I
D,
DRAIN CURRENT (AMPS)
2.5 V
0.3
V
DS
≥
5 V
0.2
2.0 V
0.1
1.8 V
1.6 V
1.4 V
0
1
2
3
4
5
0.1
T
J
= 25°C
0
1
T
J
= 125°C
0
T
J
= −55°C
2
1.5
2.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
5
I
D
= 0.255 A
T
J
= 25°C
4
6
Figure 2. Transfer Characteristics
T
J
= 25°C
5
3
4
V
GS
= 2.5 V
3
2
1
2
V
GS
= 4.5 V
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
0
0.1
0.2
0.3
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
9.0
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
−50
−25
0
25
50
V
GS
= 4.5 V, I
D
= 10 mA
1
75
100
125
150
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 1.65 V, I
D
= 1 mA
I
DSS
, LEAKAGE (nA)
V
GS
= 1.8 V, I
D
= 10 mA
100
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10
T
J
= 125°C
5
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
TYPICAL PERFORMANCE CURVES
25
C
iss
C, CAPACITANCE (pF)
20
C
rss
t, TIME (ns)
100
T
J
= 25°C
1000
V
DD
= 5 V
I
D
= 10 mA
V
GS
= 4.5 V
t
d(off)
t
f
t
r
t
d(on)
15
C
iss
10
C
oss
5
V
DS
= 0 V
5
V
GS
0
V
DS
V
GS
= 0 V
5
10
15
C
rss
20
10
0
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.4
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
0.3
0.2
0.1
T
J
= 150°C
T
J
= 125°C
0
0.4
T
J
= −55°C
1.0
0.6
0.8
0.9
0.5
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
PACKAGE DIMENSIONS
SOT−723
−X−
D
b1
−Y−
3
A
E
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
L
C
H
E
DIM
A
b
b1
C
D
E
e
H
E
L
e
b
2X
0.08 (0.0032) X Y
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm
inches
Rev .O 5/5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
