LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−89
Features
LNTA7002NT1G
S-LNTA7002NT1G
Low Gate Charge for Fast Switching
Small 1.6 X 1.6 mm Footprint
ESD Protected Gate
We declare that the material of product is ROHS compliant
and halogen free.
•
ESD
Protected:2000V
ESD
Protected:1500V
•
S- Prefix for Automotive and Other Applications Requiring
ESD Protected:1500V
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
•
•
•
•
SC-89
•
Power Management Load Switch
•
Level Shift
•
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
Gate
1
3
Drain
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady State = 25°C
Steady State = 25°C
t
P
v
10
ms
Symbol
V
DSS
V
GS
I
D
P
D
I
DM
T
J
,
T
STG
I
SD
T
L
Value
30
"10
154
300
618
−55 to
150
154
260
Unit
V
V
mA
mW
mA
°C
mA
°C
T6 = Specific Device Code
M = Month Code
Symbol
R
qJA
Max
416
Unit
°C/W
Source
2
(Top View)
MARKING DIAGRAM
3
T6
1
M
2
Shipping
3000/Tape&Reel
10000/Tape&Reel
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
ORDERING INFORMATION
Device
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Marking
T6
T6
LNTA7002NT1G
S-LNTA7002NT1G
LNTA7002NT3G
S-LNTA7002NT3G
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
GS(TH)
R
DS(on)
V
DS
= V
GS
, I
D
= 100
mA
V
GS
= 4.5 V, I
D
= 154 mA
V
GS
= 2.5 V, I
D
= 154 mA
Forward Transconductance
CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Drain−Source Diode Characteristics
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 0.154 mA
0.77
0.9
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 5.0 V,
I
D
= 75 mA, R
G
= 10
W
13
15
98
60
ns
ns
C
ISS
C
OSS
C
RSS
V
DS
= 5.0 V, f = 1 MHz,
V
GS
= 0 V
11.5
10
3.5
pF
g
FS
V
DS
= 3 V, I
D
= 154 mA
0.5
1.0
1.4
2.3
80
1.5
7.0
7.5
V
W
mS
V
(BR)DSS
I
DSS
I
DSS
I
GSS
I
GSS
I
GSS
V
GS
= 0 V, I
D
= 100
mA
V
GS
= 0 V, V
DS
= 30 V
V
GS
= 0 V, V
DS
= 20 V,
T = 85
°C
V
DS
= 0 V, V
GS
=
±10
V
V
DS
= 0 V, V
GS
=
±5
V
V
DS
= 0 V, V
GS
=
±5
V
T = 85
°C
30
1.0
1.0
±25
±1.0
±1.0
V
mA
mA
mA
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
0.2
I
D,
DRAIN CURRENT (AMPS)
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.4
0.8
1.2
1.6
1.4 V
1.2 V
2.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 10 V
5V
2.8 V
2.4 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
0.2
V
DS
= 5 V
0.16
2V
0.12
0.08
T
J
= 125°C
0.04
0
0.6
T
J
= 25°C
T
J
= −55°C
1.2
0.8
1.6
1
1.4
1.8
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
2.5
V
GS
= 4.5 V
2
T
J
= 125°C
2.5
Figure 2. Transfer Characteristics
T
J
= 25°C
2
V
GS
= 2.5 V
1.5
T
J
= 25°C
1
T
J
= −55°C
0.5
0
0.05
0.1
0.15
I
D,
DRAIN CURRENT (AMPS)
0.2
1.5
V
GS
= 4.5 V
1
0.5
0
0.05
0.1
0.15
0.2
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50
1
−25
0
25
50
75
100
125
150
I
D
= 0.15 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
100
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10
T
J
= 125°C
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
25
C
iss
C
rss
t, TIME (ns)
100
T
J
= 25°C
1000
V
DD
= 5.0 V
I
D
= 75 mA
V
GS
= 4.5 V
t
d(off)
t
f
t
r
t
d(on)
C, CAPACITANCE (pF)
20
15
10
C
iss
5
0
10
V
DS
= 0 V
5
V
GS
0
V
DS
V
GS
= 0 V
5
10
15
C
oss
C
rss
20
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.16
I
S
, SOURCE CURRENT (AMPS)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.5
0.65
0.55
0.6
0.7
0.75
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
V
GS
= 0 V
T
J
= 25°C
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev .O 5/5
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