Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
Lead free product
Halogen-free type
COLLECTOR
3
BASE
1
2
3
MMBT3904WGH
1
SOT-323
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=1.0mAdc, I
B
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uAdc, I
E
=0 )
Emitter-Base Breakdowe Voltage
( I
E
=10 uAdc, I
C
=0 )
Base Cutoff Current
( V
CE
=30 Vdc, V
EB
=3.0 Vdc )
Collector Cutoff Current
( V
CE
=30 Vdc, V
EB
=3.0 Vdc )
(3)
V
(BR)CEO
40
-
Vdc
V
(BR)CBO
60
-
Vdc
V
(BR)EBO
6.0
-
Vdc
I
BL
-
50
nAdc
I
CEX
-
50
nAdc
2010/12
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Continued)
Characteristic
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
DC Current Gain
( I
C
=0.1 mAdc, V
CE=
1.0 Vdc )
( I
C
=1.0 mAdc, V
CE=
1.0 Vdc )
( I
C
=10 mAdc, V
CE=
1.0 Vdc )
( I
C
=50 mAdc, V
CE=
1.0 Vdc )
( I
C
=100 mAdc, V
CE=
1.0 Vdc )
Collector-Emitter Saturation Voltage
( I
C
=10 mAdc, I
B
=1.0 mAdc )
( I
C
=50 mAdc, I
B
=5.0 mAdc )
Base-Emitter Saturation Voltage
( I
C
=10 mAdc, I
B
=1.0 mAdc )
( I
C
=50 mAdc, I
B
=5.0 mAdc )
(3)
(3)
H
FE
40
70
100
60
30
-
-
300
-
-
-
V
CE
(sat)
-
-
0.2
0.3
Vdc
V
BE
(sat)
0.65
-
0.85
0.95
Vdc
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( I
C
=10 mAdc, V
CE
=20 Vdc, f=100 MH
Z
)
Output Capacitance
( V
CB
=5.0 Vdc, I
E
=0, f=1.0 MH
Z
)
Input Capacitance
( V
EB
=0.5 Vdc, I
C
=0, f=1.0 MH
Z
)
Input Impedance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Voltage Feedback Ratio
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Small-Signal Current Gain
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Output Admittance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Noise Figure
( V
CE
=5.0 Vdc, I
C
=100 uAdc, R
S
=1.0 k ohm, f=1.0 kH
Z
)
f
T
300
-
MH
Z
C
obo
-
4.0
pF
C
ibo
-
8.0
pF
h
ie
1.0
10
k ohms
h
re
0.5
8.0
X 10
-4
h
fe
100
400
-
h
oe
1.0
40
u mhos
N
F
-
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
( V
CC
=3.0 Vdc, V
BE
=-0.5 Vdc,
I
C
=10 mAdc, I
B1
=1.0 mAdc )
( V
CC
=3.0 Vdc,
I
C
=10 mAdc, I
B1
=I
B2=
1.0 mAdc )
td
tr
ts
tf
-
-
-
-
35
35
200
50
nS
nS
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
2010/12
2.0%.
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
+3 V
DUTY CYCLE = 2%
300 ns
+10.9 V
10 k
0
±0.5 V
< 1 ns
C
S
< 4 pF*
- 9.1 V
1N916
< 1 ns
275
10 < t
1
< 500us
DUTY CYCLE = 2%
t
1
+10.9 V
+3V
275
10 k
C
S
< 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5000
3000
2000
V
CC
=40 V
I
C
/I
B
=10
T
J
=25 C
T
J
=125 C
o
o
CAPACITANCE ( pF )
5.0
C
ibo
Q, CHARGE (pC)
1000
700
500
Q
T
3.0
C
obo
2.0
300
200
Q
A
100
70
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE ( VOLTS )
I
C
, COLLECTOR CURRENT ( mA )
Figure 3. Capacitance
Figure 4. Charge Data
2010/12
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
500
300
200
100
I
C
/I
B
=10
500
300
200
t
r
, RISE TIME ( ns )
100
70
50
30
20
10
TIME (ns)
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
t
d
@ V
OB
=0 V
t
r
@ V
CC
=3.0 V
40 V
15 V
2.0 V
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
50 70 100
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
500
300
I
C
/I
B
=20
I
C
/I
B
=10
t'
S
= t
S
- 1/8t
f
I
B1
/I
B2
Figure 6. Rise Time
500
300
V
CC
=40 V
I
B1=
I
B2
t'
s
, STORAGE TIME ( ns )
t
f
, FALL TIME ( ns )
200
100
70
50
30
20
10
7
5
200
100
70
50
30
20
10
7
5
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=20
I
C
/I
B
=10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 7. Storage Time
Figure 8. Fall Time
12
14
NF, NOISE FIGURE ( bB )
10
SOURCE RESISTANCE=200
I
C
=0.5 mA
SOURCE RESISTANCE=1.0 K
I
C
=50uA
NF, NOISE FIGURE ( bB )
SOURCE RESISTANCE=200
I
C
=1.0 mA
12
10
8
6
4
2
0
f = 1.0 KH
Z
I
C
=1.0 mA
I
C
=0.5 mA
I
C
=100 uA
I
C
=50 uA
8
6
4
2
SOURCE RESISTANCE=500
I
C
=100uA
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE ( k OHMS )
Figure 9.
Figure 10.
2010/12
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
300
100
h
oe
, OUTPUTADMITTANCE (umhos)
5.0
10
50
h
fe
, CURRENT GAIN
200
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0
3.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 11. Current Gain
Figure 12. Output Admittance
h
re
, VOLTAGE FEEDBACK RATIO(X 10-4)
5.0
10
20
10
7.0
5.0
3.0
2.0
h
ie
, INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
h
FE
, DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125 C
V
CE
=1.0V
o
1.0
0.7
0.5
0.3
0.2
T
J
= +25 C
o
T
J
= -55 C
o
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
C
, COLLECTOR CURRENT ( mA )
Figure 15. DC Current Gain
2010/12
Zowie Technology Corporation
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