VS-10MQ100NPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
Cathode
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
DO-214AC (SMA
1A
100 V
0.78 V
1 mA at 125 °C
150 °C
Single die
1.0 mJ
DESCRIPTION
The VS-10MQ100NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.5 A
pk
, T
J
= 125 °C
Range
Rectangular waveform
CHARACTERISTICS
VALUES
1
100
120
0.68
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10MQ100NPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current, T
J
= 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
TEST CONDITIONS
50 % duty cycle at T
L
= 126 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
50 % duty cycle at T
L
= 135 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.5
A
1
120
30
1.0
0.5
A
mJ
A
UNITS
I
F(AV)
Revision: 16-Feb-15
Document Number: 94119
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100NPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
1.5 A
1A
1.5 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.78
0.85
0.63
0.68
0.1
1
0.52
78.4
38
2.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
DC operation
TEST CONDITIONS
VALUES
-55 to +150
80
0.07
0.002
UNITS
°C
°C/W
g
oz.
1J
Case style SMA (similar D-64)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 16-Feb-15
Document Number: 94119
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100NPbF
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
150
140
130
120
110
100
90
DC
10
I
F
- Instantaneous Forward
Current (A)
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
0
0.4
0.8
1.2
1.6
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
2.4
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
1
T
J
= 150 °C
I
R
- Reverse Current (mA)
0.1
Average Power Loss (W)
T
J
= 125 °C
T
J
= 100 °C
1.4
1.2
1.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
0.01
T
J
= 75 °C
0.001
T
J
= 50 °C
0.0001
T
J
= 25 °C
0
0
20
40
60
80
100
0.8
0.6
0.4
0.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
DC
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
100
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
T
J
= 25 °C
10
At any rated load condition and
with rated V
RRM
applied
following surge
10
10
100
1000
10 000
1
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
(1)
Revision: 16-Feb-15
Document Number: 94119
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100NPbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
10
2
M
3
Q
4
100
5
N
6
TR
7
PbF
8
Vishay Semiconductors product
Current rating (10 = 1 A)
M = SMA
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
N = new SMA
TR = tape and reel
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10MQ100NTRPbF
PREFERRED PACKAGE CODE
5AT
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95400
www.vishay.com/doc?95403
www.vishay.com/doc?95404
www.vishay.com/doc?95371
Revision: 16-Feb-15
Document Number: 94119
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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