BC857BFZ
45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606
Features
BV
CEO
> -45V
I
C
= -100mA High Collector Current
P
D
= 925mW Power Dissipation
0.36mm
2
Package Footprint, 40% Smaller than DFN1006
0.4mm Height Package Minimizing Off-Board Profile
Complementary NPN Type BC847BFZ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu, Solderable per MIL-STD-202,
Method 208
e4
Weight: 0.0008 grams (Approximate)
NEW PRODUCT
X2-DFN0606-3
C
B
E
Top View
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
BC857BFZ-7B
Notes:
Marking
3W
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3W = Product Type Marking Code
Top View
Bar Denotes Base
and Emitter Side
BC857BFZ
Document number: DS37158 Rev. 2 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
BC857BFZ
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-50
-45
-6.0
-100
-200
Unit
V
V
V
mA
mA
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
270
925
465
135
135
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC857BFZ
Document number: DS37158 Rev. 2 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
BC857BFZ
Thermal Characteristics and Derating Information
0.30
Limited
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
Minimum Copper
0.25
0.20
0.15
0.10
0.05
0.00
0
20
40
60
80
100 120 140 160
100m
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
Minimum Copper
1ms
100µs
NEW PRODUCT
10m
1m
100m
1
10
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
500
100
T
amb
=25°C
Minimum Copper
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
450
400
350
300
250
200
150
100
50
Single Pulse
T
amb
=25°C
Minimum Copper
10
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
1
0
100µ
1m
10m 100m
1
10
100
1k
0.1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
BC857BFZ
Document number: DS37158 Rev. 2 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
BC857BFZ
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
CES
Min
-50
-50
-45
-6.0
—
—
—
Typical
-100
-90
-65
-8.5
—
—
340
330
-70
-300
-760
-885
-670
-715
2.0
270
Max
—
—
—
—
-15
-15
—
Unit
V
V
V
V
nA
nA
Test Condition
I
C
= -50µA, I
B
= 0
I
C
= -50µA, I
B
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50µA, I
C
= 0
V
CB
= -40V
V
CE
= -40V
I
C
= -10µA, V
CE
= -5.0V
I
C
= -2.0mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
V
CB
= -10.0V, f = 1.0MHz, I
E
= 0
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Collector-Emitter Breakdown Voltage (Note 9)
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS
(Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Note:
NEW PRODUCT
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
200
—
—
-600
—
470
-175
-500
-1,000
-1,100
-780
-850
—
—
—
mV
mV
mV
C
obo
f
T
—
100
pF
MHz
9. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
BC857BFZ
Document number: DS37158 Rev. 2 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
BC857BFZ
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0.18
I
B
= -2mA
600
I
B
= -1.8mA
I
B
= -1.6mA
0.16
550
500
T
A
= 150°C
V
CE
= 5V
-I
C
, COLLECTOR CURRENT (A)
0.12
0.10
0.08
0.06
0.04
0.02
0
0
I
B
= -1.2mA
I
B
= -1mA
I
B
= -0.8mA
I
B
= -0.6mA
I
B
= -0.4mA
-h
FE
, DC CURRENT GAIN
0.14
I
B
= -1.4mA
T
A
= 125°C
450
400
350
300
250
200
150
100
50
0
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
NEW PRODUCT
I
B
= -0.2mA
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I
C
/I
B
= 10
0
1
I
C
/I
B
= 20
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
V
CE
= -5V
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
1.2
1.0
0.8
T
A
= -55°C
0.8
0.6
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= 125°C
T
A
= 85°C
0.4
T
A
= 85°C
T
A
= 125°C
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.2
0.1
BC857BFZ
Document number: DS37158 Rev. 2 - 2
5 of 7
www.diodes.com
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
May 2015
© Diodes Incorporated
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
