BC846BLP4
65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Low Collector-Emitter Saturation Voltage, V
CE(sat)
Ultra-Small Leadless Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.0009 grams (Approximate)
X2-DFN1006-3
C
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Part Number
BC846BLP4-7B
Notes:
Marking
3S
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
3S
Top View
Bar Denotes Base
and Emitter Side
3S = Product Type Marking Code
BC846BLP4
Document number: DS35751 Rev. 2 - 2
1 of 7
www.diodes.com
July 2012
© Diodes Incorporated
BC846BLP4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Emitter Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
80
65
6
100
200
200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
0.46
1
272
120
110
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC846BLP4
Document number: DS35751 Rev. 2 - 2
2 of 7
www.diodes.com
July 2012
© Diodes Incorporated
BC846BLP4
Thermal Characteristics
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 272°C/W
Duty Cycle, D = t1/ t2
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
0.001
0.000001
1,000
P
(PK)
, PEAK TRANSIENT POIWER (W)
Single Pulse
R
θ
JA
= 272
°
C/W
R
θ
JA(t)
= r
(t)
* R
θ
JA
T
J
- T
A
= P * R
θ
JA(t)
0.5
P
D
, POWER DISSIPATION (W)
0.4
100
0.3
10
0.2
1
0.1
R
θJA
= 272
°
C/W
0.1
1E-06
0
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
0
50
100
150
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Dissipation vs. Ambient Temperature
BC846BLP4
Document number: DS35751 Rev. 2 - 2
3 of 7
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July 2012
© Diodes Incorporated
BC846BLP4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
SMALL SIGNAL CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Delay time
Rise time
Storage time
Fall time
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
C
ibo
C
obo
f
T
NF
t
d
t
r
t
s
t
f
Min
80
65
6
⎯
⎯
200
⎯
⎯
580
⎯
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
270
90
220
720
870
650
⎯
6.7
1.76
300
2
11.2
59.7
190.8
108.6
Max
⎯
⎯
⎯
15
15
5.0
450
250
600
900
⎯
700
770
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
nA
µA
⎯
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 65V
V
CB
= 40V
V
CB
= 30V, T
A
= +150°C
V
CE
= 5V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5V, I
C
= 2.0mA
V
CE
= 5V, I
C
= 10mA
V
CB
= 5V, f = 1.0MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 10mA, f = 100MHz
V
CE
= 5V, I
C
= 200µA, R
S
= 2.0kΩ,
f = 1.0kHz,
Δf
= 200Hz
V
CC
= 30V,
I
C
= 150mA,
I
B1
= I
B2
= 15mA
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
BC846BLP4
Document number: DS35751 Rev. 2 - 2
4 of 7
www.diodes.com
July 2012
© Diodes Incorporated
BC846BLP4
Typical Electrical Characteristics
500
I
C
Collector Current (A)
h
FE
, DC Current Gain
150°C
125°C
0.3
T
A
= 25°C
400
300
200
100
0
0.01
I
B
=4mA
I
B
=5mA
0.2
I
B
=2mA
I
B
=1mA
85°C
25°C
0.1
I
B
=3mA
-55°C
0.0
0.0
20.0
40.0
60.0
0.1
1
10
100
1000
I
C
Collector Current (mA)
h
FE
v I
C
1.2
I
C
/I
B
=20
V
CE
, Collector to emitter voltage (V)
V
CE
v I
C
V
CE
=5V
1.0
-55°C
25°C
-55°C
25°C
85°C
V
CE(SAT)
(V)
0.1
V
BE(ON)
(V)
0.8
0.6
0.4
125°C
150°C
125°C
150°C
85°C
0.2
1
10
100
0.0
0.01
0.1
1
10
100
1000
0.01
0.01
0.1
I
C
Collector Current (mA)
I
C
Collector Current (mA)
V
CE(SAT)
v I
C
1.2
1.0
I
C
/I
B
=20
V
BE(ON)
v I
C
100
V
CBO
=65V
V
BE(SAT)
(V)
0.8
-55°C
0.6
0.4
0.2
0.0
0.01
150°C
125°C
85°C
25°C
10
I
CBO
(nA)
0.1
1
10
100
1000
1
I
C
Collector Current (mA)
0.1
-60
-30
0
30
60
90
120
150
V
BE(SAT)
v I
C
T
A
, Ambient Temperature
I
CBO
v I
C
BC846BLP4
Document number: DS35751 Rev. 2 - 2
5 of 7
www.diodes.com
July 2012
© Diodes Incorporated
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