1N4448WSF
SURFACE MOUNT FAST SWITCHING DIODE
Features
•
•
•
•
•
•
•
•
Fast Switching Speed: t
rr
≤
4.0ns
Low Leakage Current: I
R
≤
25nA
Low Capacitance: C
T
≤
4pF
Flat Lead for High Thermal Efficiency
Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOD323F
Case Material: Molded Plastic, “Green Molding Compound”.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin annealed over Copper Alloy
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.007 grams (approximate)
NEW PRODUCT
SOD323F
Top View
Ordering Information
(Note 3)
Part Number
1N4448WSF-7
1N4448WSFQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOD323F
SOD323F
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
TK = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
TK
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
2013
A
Apr
4
May
5
YM
2014
B
Jun
6
2015
C
Jul
7
Aug
8
2016
D
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
1N4448WSF
Document number: DS35380 Rev. 3 - 2
1 of 4
www.diodes.com
August 2011
© Diodes Incorporated
1N4448WSF
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
500
250
4
0.5
Unit
V
V
V
mA
mA
A
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
400
313
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 5)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
0.62
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
Test Condition
I
R
= 100μA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Forward Voltage
V
μA
μA
μA
nA
pF
ns
Leakage Current (Note 5)
I
R
C
T
t
rr
Total Capacitance
Reverse Recovery Time
Notes:
4. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at http://www/diodes.com.
5. Short duration pulse test used to minimize self-heating.
1N4448WSF
Document number: DS35380 Rev. 3 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
1N4448WSF
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
500
P
D
,
POWER DISSIPATION (mW)
1
400
0.1
300
Note 4
0.01
200
NEW PRODUCT
0.001
100
0
0
50
25
75
100
125
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
150
0.0001
0
0.4
0.8
1.2
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT(
μ
A)
100
1.5
f = 1MHz
T
A
= 150
°
C
T
A
= 125
°
C
10
C
T
, TOTAL CAPACITANCE (pF)
1
1
T
A
= 8 5
°
C
0.1
T
A
= 25
°
C
0.5
0.01
T
A
= -55
°
C
0.001
0
10
20 30
40
50
60
70 80
90 100
0
1
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
10
40
V
R
, DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
Package Outline Dimensions
He
E
D
b (2x)
α1
β1
A
c
α2
L1
β2
SOD323F
Dim
Min
Max
Typ
A
0.60 0.75
−
b
0.25 0.35
−
c
0.05 0.26
−
D
1.15 1.35 1.25
E
1.60 1.80 1.70
He
2.30 2.70 2.50
L1
0.30 0.50 0.40
α1
7°
−
−
α2
3°
−
−
β1
7°
−
−
β2
3°
−
−
All Dimensions in mm
1N4448WSF
Document number: DS35380 Rev. 3 - 2
3 of 4
www.diodes.com
August 2011
© Diodes Incorporated
1N4448WSF
Suggested Pad Layout
C
Y (2x)
Dimensions Value (in mm)
X
0.710
Y
0.403
C
2.700
X (2x)
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
1N4448WSF
Document number: DS35380 Rev. 3 - 2
4 of 4
www.diodes.com
August 2011
© Diodes Incorporated
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