BC807-16/-25/-40
45V PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
Complementary NPN Types Available (BC817)
For switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
SOT23
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 5)
Product
BC807-16-7-F
BC807-25-7-F
BC807-40-7-F
BC807-40-13-F
BC807-40Q-7-F
BC807-40Q-13-F
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Automotive
Automotive
Marking
K5A
K5B
K5C
K5C
K5C
K5C
Reel size (inches)
7
7
7
13
7
13
Tape width (mm)
8
8
8
8
8
8
Quantity per reel
3,000
3,000
3,000
10,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
XXX M
Y
XXX = Product Type Marking Code (See table above)
YM = Date Code Marking
Y = Year ex: X = 2010
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
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October 2013
© Diodes Incorporated
BC807-16/-25/-40
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
-50
-45
-5.0
-0.5
-1.0
-200
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; device
measured when operating in steady state condition.
7. Same as Note 6, except the device is mounted on 15mm X 15mm FR4 PCB.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
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October 2013
© Diodes Incorporated
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Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
0.3
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
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October 2013
© Diodes Incorporated
BC807-16/-25/-40
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
BC807-16
BC807-25
BC807-40
BC807-16
BC807-25
BC807-40
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
Min
-50
-45
-5
—
—
100
160
250
60
100
170
—
—
100
—
Typ
—
—
—
—
—
Max
—
—
—
-100
-5.0
-100
250
400
600
—
—
—
—
—
-0.7
-1.2
—
12
V
V
MHz
pF
Unit
V
V
V
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
C
= -100µA
V
CE
= -45V
V
CE
= -25V, T
J
= +150°C
V
EB
= -5.0V
V
CE
= -1.0V, I
C
= -100mA
—
V
CE
= -1.0V, I
C
= -300mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1.0V, I
C
= -300mA
V
CE
= -5.0V, I
C
= -10mA,
f = 50MHz
V
CB
= -10V, f = 1.0MHz
DC Current Gain (Note 10)
h
FE
—
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Voltage (Note 10)
Gain Bandwidth Product
Collector-Base Capacitance
Note:
V
CE(SAT)
V
BE
f
T
C
CBO
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
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October 2013
© Diodes Incorporated
BC807-16/-25/-40
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
500
100
-I
C
, COLLECTOR CURRENT (mA)
400
-I
C
, COLLECTOR CURRENT (mA)
80
300
60
200
40
100
20
1
2
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
0
0
10
20
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
0
0
0.5
1,000
-V
CE
= 1V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
150
°
C
h
FE
, DC CURRENT GAIN
-I
C
/ -I
B
= 10
25
°
C
-50
°
C
0.3
100
0.2
25
°
C
0.1
150
°
C
-50
°
C
1
10
1,000
100
-I
C
, COLLECTOR CURRENT (mA)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
T
A
= 25
°
C
f = 20MHz
0
0.1
10
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical DC Current Gain vs. Collector Current
-V
CE
= 5.0V
1.0V
100
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain-Bandwidth Product vs. Collector Current
10
1
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
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October 2013
© Diodes Incorporated
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