VS-21DQ04, VS-21DQ04-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
DO-204AL
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-204AL (DO-41)
2A
40 V
0.5 V
10 mA at 125 °C
150 °C
Single die
5.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-21DQ04... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
V
F
T
J
2 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
2
40
V
0.5
- 40 to 150
°C
UNITS
A
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-21DQ04
40
VS-21DQ04-M3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 112 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
2
420
70
5.0
1.0
mJ
A
A
UNITS
Revision: 21-Sep-11
Document Number: 93279
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-21DQ04, VS-21DQ04-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
2A
Maximum forward voltage drop
V
FM (1)
4A
2A
4A
Maximum reverse leakage current
Typical junction capacitance
Typical series inductance
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
TYP.
0.49
0.60
0.42
0.56
0.01
5.2
130
8.0
MAX.
0.55
0.65
0.5
0.62
0.50
10
mA
pF
nH
V
UNITS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J
(1)
,
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
T
Stg
DC operation
Without cooling fin
DC operation
See fig. 4
R
thJA
R
thJL
100
°C/W
25
0.33
0.012
g
oz.
21DQ04
Case style DO-204AL (D-41)
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 21-Sep-11
Document Number: 93279
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-21DQ04, VS-21DQ04-M3
www.vishay.com
Vishay Semiconductors
150
I
F
- Instantaneous Forward Current (A)
10
Allowable Lead Temperature (°C)
DC
120
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
90
Square
wave (D = 0.50)
80 % rated V
R
applied
60
30
= 1/8 inch
see
note (1)
0
0
1
2
3
0.1
0
0.3
0.6
0.9
1.2
93279_04
93279_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
2
100
I
R
- Reverse Current (mA)
Average Power Loss (W)
10
1
0.1
0.01
0.001
0.0001
0
T
J
= 150° C
T
J
= 125° C
T
J
= 100° C
T
J
= 75° C
T
J
= 50° C
T
J
= 25° C
1.6
1.2
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0.8
RMS Limit
0.4
0
10
20
30
40
93279_05
0
1
2
3
93279_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
1000
I
FSM
- Non-Repetitive Surge Current (A)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25°C
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
0
93279_03
10
10
100
1000
10 000
10
20
30
40
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
93279_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 21-Sep-11
Document Number: 93279
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-21DQ04, VS-21DQ04-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
21
2
D
3
Q
4
04
5
TR
6
-M3
7
Vishay Semiconductors product
21 = Current Rating 2 A
D = DO-41 package
Q = Schottky Q.. series
04 = Voltage rating: 40 V
TR = Tape and reel package
TB = Tape and ammo box package
None = Bulk package
7
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-21DQ04
VS-21DQ04TR
VS-21DQ04TB
VS-21DQ04-M3
VS-21DQ04TR-M3
VS-21DQ04TB-M3
QUANTITY PER T/R
1000
5000
3000
1000
5000
3000
MINIMUM ORDER QUANTITY
1000
5000
3000
1000
5000
3000
PACKAGING DESCRIPTION
Bulk
Tape and Reel
Tape and ammo box
Bulk
Tape and Reel
Tape and ammo box
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95241
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 21-Sep-11
Document Number: 93279
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
