VS-10MQ100-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
DO-214AC (SMA)
1A
100 V
0.63 V
1 mA at 125 °C
150 °C
Single die
1.0 mJ
DESCRIPTION
The VS-10MQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1
100
120
0.68
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10MQ100-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at T
L
= 126 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
50 % duty cycle at T
L
= 135 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.5
UNITS
Maximum average forward current
See fig. 4
I
F(AV)
1
120
30
1.0
0.5
A
Maximum peak one cycle
non-repetitive surge current, T
J
= 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
mJ
A
Revision: 20-Jan-15
Document Number: 93365
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
1.5 A
1A
1.5 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
I
RM
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.78
0.85
0.63
0.68
0.1
1
0.52
78.4
38
2.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
DC operation
TEST CONDITIONS
VALUES
-55 to +150
80
0.07
0.002
UNITS
°C
°C/W
g
oz.
1J
Case style SMA (similar D-64)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 20-Jan-15
Document Number: 93365
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100-M3
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
155
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
140
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
130
0
0.2
0.4
0.6
0.8
1.0
10
I
F
- Instantaneous Forward
Current (A)
150
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
145
135
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
1
T
J
= 150 °C
I
R
- Reverse Current (mA)
0.1
Average Power Loss (W)
T
J
= 125 °C
T
J
= 100 °C
1.4
1.2
1.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
0.01
T
J
= 75 °C
0.001
T
J
= 50 °C
0.0001
T
J
= 25 °C
0
0
20
40
60
80
100
0.8
0.6
0.4
0.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
DC
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
T
J
= 25 °C
10
At any rated load condition and
with rated V
RRM
applied
following surge
10
10
100
1000
10 000
1
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 20-Jan-15
Document Number: 93365
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10MQ100-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
10
2
M
3
Q
4
100
5
-M3
6
Vishay Semiconductors product
Current rating
M = SMA
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10MQ100-M3/5AT
PREFERRED PACKAGE CODE
5AT
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95400
www.vishay.com/doc?95403
www.vishay.com/doc?95404
Revision: 20-Jan-15
Document Number: 93365
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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