VS-12CDU06-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 6 A FRED Pt
®
FEATURES
• Ultrafast recovery time, reduced Q
rr
, and soft
recovery
K
• 175 °C maximum operating junction temperature
• For PFC CRM, snubber operation
• Low forward voltage drop
1
2
Top View
Bottom View
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263AC (SMPD)
K
Cathode
Anode 1
Anode 2
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Diode variation
TO-263AC (SMPD)
2x6A
600 V
0.89 V
45 ns
175 °C
Dual die
State of the art ultrafast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop, ultrafast recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, in the
AC/DC section of SMPS, freewheeling and clamp diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
solder pad
= 156 °C
T
J
= 25 °C, 6 ms square pulse
TEST CONDITIONS
VALUES
600
12
6
200
105
A
UNITS
V
Non-repetitive peak surge current
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage, per diode
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 6 A
I
F
= 6 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.05
0.89
-
20
8
MAX.
-
1.3
1.1
5
150
-
μA
pF
V
UNITS
Reverse leakage current, per diode
Junction capacitance, per diode
Revision: 10-Feb-15
Document Number: 95810
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CDU06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 6 A,
dI
F
/dt = 500 A/μs,
V
R
= 400 V
MIN.
-
-
-
-
-
-
-
-
TYP.
45
-
65
90
10
15
350
680
MAX.
-
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, per diode
junction to solder pad
Approximate weight
Marking device
Case style TO-263AC (SMPD)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
TEST CONDITIONS
MIN.
-55
-
TYP.
-
1.8
0.55
0.02
12CDU06
MAX.
+175
2.5
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
I
R
- Reverse Current (μA)
T
J
= 150 °C
10
T
J
= 125 °C
1
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
T
J
= 25 °C
0.01
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Feb-15
Document Number: 95810
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CDU06-M3
www.vishay.com
Vishay Semiconductors
100
C
T
- Junction Capacitance (pF)
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
10
0.01
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
10
RMS limit
Allowable Case Temperature (°C)
Average Power Loss (W)
175
170
165
DC
160
155
150
See
note
(1)
145
0
1
2
3
4
5
6
7
Square
wave (D = 0.50)
80 % rated V
R
applied
8
6
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
4
2
0
0
2
4
6
8
10
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Feb-15
Document Number: 95810
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CDU06-M3
www.vishay.com
Vishay Semiconductors
800
700
600
125 °C
180
160
140
t
rr
(ns)
120
Q
rr
(nC)
125 °C
100
80
60
40
20
100
1000
25 °C
500
400
300
200
100
100
1000
25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Feb-15
Document Number: 95810
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CDU06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
12
C
D
U
06
-M3
1
1
2
3
-
-
-
2
3
4
5
6
7
Vishay
Semiconductors
product
Current rating (12 A)
Circuit configuration:
C = common cathode
4
5
6
7
-
-
-
-
D =
SMPD
package
Process type,
U = ultrafast recovery
Voltage code (06 = 600 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-12CDU06-M3/I
QUANTITY PER REEL
2000
MINIMUM ORDER QUANTITY
2000
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95604
www.vishay.com/doc?95566
www.vishay.com/doc?88869
Revision: 10-Feb-15
Document Number: 95810
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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