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TSI30H120CW

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 120V V(RRM), Silicon, TO-262AA, I2PAK-3
产品类别分立半导体    二极管   
文件大小236KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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TSI30H120CW概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 120V V(RRM), Silicon, TO-262AA, I2PAK-3

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TSI30H100CW - TSI30H200CW
Taiwan Semiconductor
30A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
2
3
I PAK
2
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
I
2
PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
Instantaneous forward
voltage per diode (Note1)
I
F
= 15A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
R
θJC
T
J
T
STG
0.69
0.61
-
10
MAX
0.78
0.68
250
35
TYP
0.75
0.64
-
10
TSI30H
100CW
100
TSI30H
120CW
120
30
15
200
10000
MAX
0.84
0.73
250
35
2.7
- 55 to +150
- 55 to +150
TYP
0.81
0.68
-
3
MAX
0.90
0.77
150
20
TYP
0.84
0.70
-
3
MAX
0.92
0.79
150
20
V
μA
mA
°C/W
°C
°C
TSI30H
150CW
150
TSI30H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Document Number: DS_D1411045
Version: C15

TSI30H120CW相似产品对比

TSI30H120CW TSI30H100CW TSI30H200CW
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 120V V(RRM), Silicon, TO-262AA, I2PAK-3 30A, 100V - 200V Trench Schottky Rectifiers 30A, 100V - 200V Trench Schottky Rectifiers

 
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